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Transparent Amorphous Oxide Semiconductors for Flexible Electronics

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Handbook of Transparent Conductors

Abstract

Transparent amorphous oxide semiconductors have large electron mobility comparable to that in the corresponding crystalline materials and conductivity is continuously controllable from the almost insulating state to the degenerate state. Thin film transistors employing these materials as the channel layer exhibit excellent performance, mobility and stability, notwithstanding that they can be easily fabricated by the conventional sputtering technique at low temperatures. Extensive research is going on aiming at application to the backplane to drive next generation flat panel displays. This chapter describes the fundamentals of these materials and application to displays.

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Authors and Affiliations

  1. Frontier Research Center & Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan

    Hideo Hosono

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  1. Hideo Hosono
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Correspondence to Hideo Hosono .

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  1. Photovoltaics & Electronic Materials, Center & Basic Sciences Ctr., NREL, Cole Blvd. 1617, Golden, 80401-3393, Colorado, USA

    David S. Ginley

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Hosono, H. (2011). Transparent Amorphous Oxide Semiconductors for Flexible Electronics. In: Ginley, D. (eds) Handbook of Transparent Conductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-1638-9_13

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  • DOI: https://doi.org/10.1007/978-1-4419-1638-9_13

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