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Diffusion and Barrier Layers

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Copper Interconnect Technology

Diffusion is a frequently used technique to incorporate impurities into a semiconductor. Imperfection in a nearly perfect crystal is the prime theme of intentional impurity diffusion in silicon crystals [1] for the formation of p-n junctions, conduction channels, and source drain regions. The performance of the devices depends critically on the impuri-ty concentration and the impurity profile. For this reason the diffusion of various impurities in semiconductors has been studied extensively.

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Gupta, T. (2009). Diffusion and Barrier Layers. In: Copper Interconnect Technology. Springer, New York, NY. https://doi.org/10.1007/978-1-4419-0076-0_3

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