Abstract
Weak anti-localization has been observed in the magneto-resistance of both symmetrically and asymmetrically doped InSb/AlInSb quantum wells. We find that for both types of structures, the magnetic field corresponding to the conductance minimum is in good agreement with the dominant spin-orbit term, which is the cubic Dresselhaus and Rashba terms for symmetric and asymmetric samples, respectively.
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References
Zutic, Igor et al., Rev. Mod. Phys. 76, 323, 2004
Winkler, R., Spin-Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems, Springer, 2003
Khodaparast, G.A., et al., Phys. Rev. B 70, 155322, 2004; Chen, H., et al., Appl. Phys. Lett. 86, 032113, 2005
Iordanskii, S.V., et al., JETP Lett. 60, 206, 1994
Miller, J.B., et al., Phys. Rev. Lett. 90, 076807, 2003
The L-G model for WAL is applicable only for fields B>H eff as defined in Ref. 5
Knap, W. et al. Phys. Rev. B 53, 3912, 1996; Desrat, W. et al., Phys. Rev. B 74, 193317, 2006
Since dislocation scattering is dominant in our samples, we expect τ3/τ1 ∼1
Crooker, S.A. and Smith, D.L., Phys. Rev. Lett. 94, 236601, 2005; Chang, Shu-wei and Chuang, Shun-Lien, Phys. Rev. B 72, 115429, 2005
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Dedigama, A.R. et al. (2008). Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quantum Wells. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_9
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DOI: https://doi.org/10.1007/978-1-4020-8425-6_9
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8424-9
Online ISBN: 978-1-4020-8425-6
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