Electrostatic discharge (ESD) events are recognized as a significant contributor of early life failures and failures throughout the operating life of semiconductor devices. Although contemporary integrated circuit designs include ESD protection circuitry, the effectiveness of this protection must be determined in a manner which will ensure its effectiveness in the “real world” if the part is to meet the reliability requirements for the given application. An ESD event may carry amperes of current in a short period of time, typically from hundreds of pico-seconds to hundreds of nano-seconds. Needless to say such events are very harmful for sensitive electronic components and integrated circuits (ICs).
For the purposes of reproduction under controlled conditions, the real word ESD events are classifieds in three main categories under which electronic elements or ICs are tested:
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The human body model (HBM) represents an ESD event caused by a charged human discharging the current into a grounded IC.
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The machine model (MM) represents a discharge coming from a charged machine into a grounded IC. This ESD model is typically used in automotive assembly lines.
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The charge device model (CDM) covers the ESD discharge when a device or an IC is self-charged during the manufacturing process and comes into the contact with grounded equipment.
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(2008). ESD Models and Test Methods. In: ESD Protection Device and Circuit Design for Advanced CMOS Technologies. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8301-3_2
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