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Radiation Effects in Microelectronics

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Radiation Effects on Embedded Systems

Abstract

Understanding the effects of radiation on electronic devices and circuits is particularly important for space applications because the electronics may be exposed to a variety of energetic particles and photons. The resulting effects may be manifested as long-term parametric degradation or as transient changes in the state of the circuits. This paper presents an overview of these effects, emphasizing those device-level effects that are particularly relevant for space environments. MOS and bipolar technologies are considered. A new simulation method for analyzing single-event effects, based on detailed descriptions of a large number of individual events, is described. This method has the potential to provide more accurate analysis than conventional methods based on simulation of the device response to an average event.

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Author information

Authors and Affiliations

  1. Institute for Space and Defense Electronics Vanderbilt University Nashville, TN 37235, USA

    R. D. Schrimpf

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  1. R. D. Schrimpf
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Editor information

Editors and Affiliations

  1. TIMA Laboratory, Grenoble, France

    RAOUL VELAZCO

  2. Université Bordeaux 1, France

    PASCAL FOUILLAT

  3. Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil

    RICARDO REIS

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Schrimpf, R. (2007). Radiation Effects in Microelectronics. In: VELAZCO, R., FOUILLAT, P., REIS, R. (eds) Radiation Effects on Embedded Systems. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-5646-8_2

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  • DOI: https://doi.org/10.1007/978-1-4020-5646-8_2

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-5645-1

  • Online ISBN: 978-1-4020-5646-8

  • eBook Packages: EngineeringEngineering (R0)

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