Abstract
Porous silicon (PS) is a material formed by anodic dissolution of single crystalline silicon in HF containing solutions. Since its discovery more than four decades ago, a large number of investigations have been undertaken, the results of which revealed that PS has extremely rich morphological features and the formation process of PS is a very complex function of numerous factors.1 Accordingly, many theories have been proposed on the various mechanistic aspects on formation and morphology of PS. Figure 1 is a summary of the progress of research on PS with respect to the discovery of major PS features and development of theories.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
X. G. Zhang, Electrochemistry of Silicon and Its Oxide, Kluwer Academic, New York, 2001
D. R. Turner, J. Electrochem. Soc., 105 (1958) 402.
A. Uhlir, Jr., The Bell System Technical Journal, March (1956) 333.
R. Memming and G. Schwandt, Surf. Sci. 4 (1966) 109.
R. L. Meek, J. Electrochem. Soc., 118 (1971) 437.
M. J. J. Theunissen, J. Electrochem. Soc., 119 (1972) 351.
Y. Arita and Y. Sunahama, J. Electrochem. Soc., 124 (1977) 285.
Y. Watanabe, Y. Arita, T. Yokoyama and Y. Lgarashi, J. Electrochem. Soc., 122 (1975) 1315.
G. Bomchil, R. Herino, K. Barla and J. C. Pfister, J. Electrochem. Soc., 130 (1983)1611.
T. Uganami and M. Seki, J. Electrochem. Soc., 125 (1978) 1339.
V. Labunov, I. Baranov and V. Bondarenko, Thin Solid Film, 64 (1979) 479.
M. I. J. Beale, J. D. Benjamin, M. J. Uren, N. G. Chew, and A. G. Cullis, J. Crystal Growth, 73 (1985) 622.
S. F. Chuang, S. D. Collins, and R. L. Smith, Appl. Phy. Lett., 55(7), 14 August, (1989) 675.
R. L. Smith and S. D. Collins, J. Appl. Phy. 71(8), 15 April, (1992) R1.
R. L. Smith, S. F. Chuang, and S. D. Collins, J. Electronic Materials, 17 (1988) 228.
T. Unagami, J. Electrochem. Soc., 127 (1980) 476.
V. P. Parkhutik, L. K. Glinenko, and V.A. Labunov, Surface Technology, 20 (1983) 265.
X. G. Zhang, S. D. Collins, and R. L. Smith, J. Electrochem. Soc., 136 (1989) 1561.
V. Lehmann, J. of Electroanalytical Chemistry, 140 (1993) 2836.
V. Lehmann and H. Foll, J. Electrochem. Soc. 137 (1990) 653.
V. Lehmann, Thin Solid Films, 255 (1995) 1.
V. Lehmann and U. Gosele, Advanced Materials, 4 (1992) 114.
V. Lehmann and U. Gosele, Appl. Phys. Lett., 58(8), 25 February, (1991) 856.
X.G. Zhang, J. Electrochem. Soc., 138 (1991) 3750.
M. H. Al Rifai, M. Christophersen, S. Ottow, J. Carstensen, and H. Foll, J. Electrochem. Soc., 147 (2000) 627.
T. Osaka, K. Ogasawara, and S. Nakahara, J. Elechochem. Soc., 144 (1997) 3226.
C. Levy-Clément, A. Lagoubi and M. Tomkiewicz, J. Electrochem. Soc., 141 (1994) 958.
C. Levy-Clément, A. Lagoubi, R. Tenne and M. Neumann-Spallart, Electrochimica Acta, 37(5) (1992) 877.
A. A. Yaron, S. Bastide, J. L. Maurice and C. L. Clement, J. Luminescence, 57 (1993) 67.
Y. Arita, Journal of Crystal Growth, 45 (1978) 383.
C. Levy-Clément, A. Lagoubi, and M. Tomkiewicz, J. Electrochem. Soc., 141 (1994) 958.
M. M. Rieger and P. A. Kahl, J. Elechochem. Soc., 142 (1995) 1490.
E. K. Propst and P. A. Kohl, J. Electrochem. Soc., 141 (1994) 1006.
E. A. Ponomarev and C. Levy-Clément, Electrochemical and Solid-State Letters, I (1998) 42.
R. B. Wehrspohn, J. -N. Chazalviel, and F. Ozanam, J. Electrochem. Soc., 145 (1998) 2958.
S. Cattarin, E. Pantano, and F. Decker, Electrochemistry Communications, 1 (1999) 483.
J. -N. Chazalviel, R. B. Wehrspohn, and F. Ozanam, Materials Science and Engineering, B69–70 (2000) 1.
R. B. Wehrspohn, F. Ozanam, and J. -N. Chazalviel, J. Electrochem. Soc., 146 (9) (1999) 3309.
V. Lehmann and S. Ronnebeck, J. Electrochm. Soc., 146 (1999) 2968.
J. Carstensen, M. Christophersen, and H. Foll, Materials Science and Engineering, B69–70 (2000) 23.
H. Foll, J. Carstensen, M. Christophersen, and G. Hasse, Physica Status Solidi, a(182) (2000) 45.
J. Carstensen, M. Christophersen, and H. Foll, Physica Status Solidi, (2000) 63.
G. Hasse, M. Christophersen, J. Carstensen, and H. Foll, Physica Status Solidi, a(182) (2000) 23.
P. Jaguiro, S. La Monica, S. Lazarouk and A. Ferrari, Electrochemical Society Proceedings, 97–7 (1997) 296.
A. Valance, Physical Review B, 55 (1997) 9706.
S. La Monica, P. Jaguiro, and A. Ferrari, Electrochemical Society Proceedings, 97–7 (1997) 140.
R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, John Wiley & Sons, New York, 1977.
I. Ronga, A. Bsiesy, F. Gaspard, F. Herino, M. Ligeon, and F. Muller, J. Electrochem. Soc., 138 (1991) 1403.
F. Gaspard, A. Bsiesy, M. Ligeon, F. Muller, and R. Herino, J. Electrochem. Soc., 136 (1989) 3043.
P. C. Searson and X. G. Zhang, J. Electrochem. Soc., 137 (1990) 2539.
Y. Kang and J. Jorne, J. Electrochem. Soc., 144(9) (1997) 3104.
M. J. Eddowes, J. Electroanal. Chem., 280 (1990) 297.
V. A. Burrows, Y. J. Chabal, G. S. Higashi, K. Raghavachari and S. B. Christman, Appl. Phys. Lett., 53(11) (1988) 998.
C. M. Gronet, N. S. Lewis, G. Cogan, and J. Gibbons, Proc. Natl. Acad. Sci. USA, 80 (1983) 1152.
S. Lust and C. Levy-Clément, J. Electrochem. Soc., 149 (2002) C338.
E. Peiner, and A. Schlachetzki, J. Elechochem. Soc., 139 (1992) 552.
J. Rappich and H.J. Lewerenz, Thin Solid Film, 276 (1996) 25.
J.-N. Chazalviel, M. Etman, and F. Ozanam, J. Electroanal. Chem., 297 (1991) 533.
P.C. Searson, J.M. Macaulay, and Prokes, J. Electrochem. Soc., 139 (1992) 3373.
R. Herino, G. Romchil, K. Boala, and C. Bertrand, J. Electrochem. Soc., 134 (1987) 1994.
I. Ronga, A. Bsiesy, F. Gaspard, F. Herino, M. Ligeon, and F. Muller, J. Electrochem. Soc., 138 (1991) 1403.
V. V. Doan and M. Sailor, Science, 256 (1992) 1791.
M. Christophersen, J. Carstensen, A. Feuerhake, and H. Foll, Materials Science and Engineering, B69–70 (2000) 194.
L. Koker and K. W. Kolasinski, Materials Science and Engineering, B69–70 (2000) 132.
X. G. Zhang, unpublished results.
R. C. Frye, Mat. Res. Soc. Symp. Proc., 33 (1984) 53.
M. Guendouz, P. Joubert, and M. Sarret, Materials Science and Engineering, B69–70 (2000) 43.
H. Unno, K. Imai, and S. Muramoto, J. Electrochem. Soc., 134 (1987) 645.
H. Braumgart, R. C. Frye, F. Philipp, and H. J. Leamy, Mat. Res. Soc. Symp. Proc. 33 (1984) 63.
O. Teschke, Appl. Phys. Lett., 64(15) (1994) 1986.
M. I. J. Beale, N. G. Chew, M. J. Uren, A. G. Cullis, and J. D. Benjamin, Appl. Phys. Lett., 46(1) (1985) 1095.
H. Sugiyama and O. Nittono, Journal of Crystal Growth, 103 (1990) 156.
K. D. Legg, A. B. Ellis, J. M. Bolts, and M. S. Wrighton, Proc. Natl. Acad. Sci. USA, 74(10) (1977) 4116.
N. Noguchi, I. Suemune, M. Yamanishi, G. C. Hua, and Nobuo Otsuka, Jpn. J. Appl. Phys., 31 (1992) L490.
M. Christophersen, J. Carstensen, and H. Foll, Physica Status Solidi, (a) 182, 1 (2000) 45.
S. -F. Chuang, S. D. Collins, and R. L. Smith, Appl. Phys. Lett., 55(15) (1989) 1540.
P. C. Searson, J. M. Macaulay, and F. M. Ross, J. Aapl. Phys., 72(1) (1992) 253.
T. Osaka, K. Ogasawara, M. Katsunuma, and T. Momma, J. of Electroanalytical Chemistry, 396 (1995) 69.
V. Labunov, V. Bondarenko, L. Glinenko, A. Dorofeev and L. Tabulina, Thin Solid Films, 137 (1986) 123.
V. Lehmann, R. Stengl, and A. Luigart, Materials Science and Engineering, B69 (2000) 11.
V. Lehmann, A. Luigart and V. Corbel, Electrochemical Society Proceedings, 97–7 (1997) 132.
C. Gui, M. Elwenspoek, J. G. E., Gardeniers, and P. V. Lambeck, J. Electrochem. Soc., 145 (1998) 2204.
E.A. Ponomarev and C. Levy-Clément, Electrochemical Society Proceedings, 97–7 (1997) 319.
C. Jäger, B. Finkenberger, W. Jäger, M. Christophersen, J. Carstensen, and H. Föil, Materials Science and Engineering, B69–70 (2000) 199.
V. Lehmann and U. Grüning, Thin Solid Films, 297 (1997) 13.
J. E. A. M. van den Meerakker, R. J. G. Elfrink, F. Roozeboom and J. F. C. M. Verhoeven, J. Electrochem. Soc., 147(7) (2000) 2757.
P. Allongue, C. H. de Villeneuve, M. C. Bernard, J. E. Peou, A. Boutry-Forveille, and C.Levy-Clément, Thin Solid Films, 297 (1997) 1.
St. Frohnhoff, M. Marso, M. G. Berger, M. Thonossen, H. Luth, and H. Munder, J. Elechochem. Soc., 142 (1995) 615.
M. Binder, T. Edelmann, T. H. Metzger, G. Mauckner, G. Goerigk, and J. Peisl, Thin Solid Film, 276 (1996) 65.
S. Billat, M. Thonissen, R. Arens-Fischer, M. G. Berger, M. Kruger, and H. Luth, Thin Solid Films, 297 (1997) 22.
R. Houbertz, U. Memmert, and R. J. Behm, J. Vac. Sci. Technol. B, 12(6) (1994) 3145.
M. Thönissen, M. G. Berger, R. Arens-Fischer, O. Glüger, and H. Lüth, Thin Solid Films, 276 (1996) 21.
M. Thönisson, M. G. Berger, R. Arens-Fisher, O. Glück, M. Kruger, and H. Lüth, Thin Solid Film, 276 (1996) 21.
S. F. Chuang, S. D. Collins and R. L. Smith, The Technical Digest of the Solid State Sensor and Actuator Workshop, Hilton Head Island, SC, June 6–9, IEEE, New York, 1988, p.151.
S. Ronnebeck, J. Carstensen, S. Ottow, and H. Foll, Electrochemical and Solid State Letters, 2 (2000) 126.
S. Bengtsson and L. Engstrom, J. Appl. Phys., 66(3) (1989) 1231.
A. G. Cullis and L. T. Canham, Nature, 353 (1991) 353.
A. Belaidi, M. Safi, F. Ozanam, J. N. Chazalviel, and O. Gorochov, J. Electrochem. Soc., 46 (1999) 2659.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2006 Springer
About this chapter
Cite this chapter
Zhang, G.X. (2006). Porous Silicon: Morphology and Formation Mechanisms. In: Vayenas, C., White, R.E., Gamboa-Adelco, M.E. (eds) Modern Aspects of Electrochemistry. Modern Aspects of Electrochemistry, vol 39. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-31701-4_2
Download citation
DOI: https://doi.org/10.1007/978-0-387-31701-4_2
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-387-23371-0
Online ISBN: 978-0-387-31701-4
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)