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Carbon Nanotube Electronics and Optoelectronics

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Applied Physics of Carbon Nanotubes

Part of the book series: NanoScience and Technology ((NANO))

Abstract

In this chapter, we review progress to date in carbon nanotube electronics and optoelectronics. We discuss the underlying physics of CNT-FETs, highlighting the similarities and differences relative to conventional silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), and we examine how these affect CNT-FET electrical characteristics. As device scaling is the key technology driver in today's semiconductor technology, we explore how CNT-FETs behave when scaled to smaller dimensions and the impact this scaling behavior may have on their suitability for technological insertion. We look at results achieved to date on simple CNT-based circuits, and we consider the requirements of more complex architectures. Finally, we discuss the optoelectronic properties of CNTs and show that CNT-FETs can also be used as light emitting and light decoding devices.

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Authors
  1. Ph. Avouris
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  2. M. Radosavljević
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  3. S.J. Wind
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Editor information

Editors and Affiliations

  1. Department of Physics, Lehigh University, 16 Memorial Drive East, Bethlehem, PA, 18015, USA

    Slava V. Rotkin

  2. Experimental Station, DuPont Company, Wilmington, DE, 19880-0228, USA

    Shekhar Subramoney

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© 2005 Springer-Verlag Berlin Heidelberg

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Avouris, P., Radosavljević, M., Wind, S. (2005). Carbon Nanotube Electronics and Optoelectronics. In: Rotkin, S.V., Subramoney, S. (eds) Applied Physics of Carbon Nanotubes. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-28075-8_9

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