This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Bibliography
S. Aritome, R. Shirota, G. Hemink, T. Endoh, and F. Masoka, “Reliability issues of Flash memory cells,” Proc. IEEE, vol. 81, no. 5, pp. 776–788, (May 1993).
R. Bez et al., “Depletion Mechanism of Flash cell induced by parasitic drain stress contidion”, VLSI Technology Symposium, (1994).
J. D. Bude, “Gate current by impact ionization feedback in sub-micron MOSFET technologies”, in 1995 Symposium VLSI Technology Dig. Tech. Pap., pp. 101–102, (June 1995).
J. D. Bude, M.R. Pinto and R. K. Smith, “Monte Carlo Simulation of the CHISEL Flash Memory Cell,” IEEE Tran. Electron Devices, vol. 47, pp. 1873–1881, (Oct. 2000).
E. Burstein, S. Lundqvist, “Tunneling Phenomena in Solida”, Plenum Press, New-York, (1969).
E. Camerlenghi, P. Caprara, and G. Crisenza: “A 18 µm2 cell for megabit CMOS EPROM”, in Proc. 17th European Solid State Device Research Conf., pp. 765–768, (Sept. 1987).
John Y. Chen, CMOS devices and technology for VLSI, Prentice Hall, (1990).
A. Chimenton, P. Pellati, and P. Olivo, “Constant Charge Erasing Scheme for Flash Memories,” IEEE Tran. Electron Devices, vol. 49, pp. 613–618, (Apr. 2002).
A. Chimenton, et al., “Overerase Phenomena: An insight Into Flash Memory reliability”, IEEE Proceeding of the, Vol. 91, No. 4, pp. 617–626, (April 2003).
C. Dunn, C. Kaya, T. Lewis, T. Strauss, J. Schreck, P. Hefley, M. Middendorf, and T. San, “Flash EEPROM disturb mechanisms,” in Proc. Int. Rel. Phys. Symp., pp. 299–308, (April 1994).
B. Eitan and D. Frohman-Bentchkowski, “Hot electron injection into the oxide in n-channel MOS devices”, IEEE Trans. Electron Devices, vol. ED-28, pp. 328–340, (March 1981).
B. Eitan, R. Kazerounian, A. Roy, G. Crisenza, P. Cappelletti, and A. Modelli, “Multilevel Flash cells and their trade-offs”, in 1996 IEDM Tech. Dig., pp. 169–172, (Dec. 1996).
Leo Esaki, “Long Journey into Tunneling”, Proceedings of IEEE, vol 62, No 6, pp 825–835, (June 1974).
D. Frohman-Bentchkowsi, “Memory behavior in a floating gate avalanche-injection MOS (FAMOS) structure”, Appl. Phys. Lett., vol. 18, pp. 332–334, (1971).
D. Frohman-Bentchkowsi, “FAMOS-A new semiconductor charge storage device”, Solid State Electron, vol. 17, pp. 517–520, (1974).
C. Hu, “Lucky-electron model for channel hot-electron emission”, 1979 IEDM Tech. Dig., pp. 22–25, (Dec. 1979).
C. Hu, “Future CMOS scaling and reliability”, Proc. IEEE, vol. 81, pp. 682–689, (May 1993).
Y. Igura et al., “New Device Degradation Due to "Cold" Carriers Created by Band-to Band Tunneling”, IEEE Electro Device Letters, VOL. 10, NO. 5, MAY (1989).
C. Kittel, Introduction to Solid State Physic, John Wiley & Sons, New York, (1966).
M. Lenzlinger and E. H. Snow, “Fowler-Nordheim tunneling into thermally grown SiO2”, J. of Applied Physics, vol. 40, pp. 273–283, (Jan. 1969).
S. Mahapatra, S. Shukuri, and J. Bude, “CHISEL flash EEPROM-Part I: performance and scaling”, IEEE Trans. Electron Devices, vol. ED-49, pp. 1296–1301, (July 2002).
S. Mahapatra, S. Shukuri, and J. Bude, “CHISEL flash EEPROM-Part I: reliability”, IEEE Trans. Electron Devices, vol. ED-49, pp. 1302–1307, (July 2002).
Yohsuka Mochizucki, “Read-disturb Failure in Flash Memory at low field”, Intel reports, Nikkei Electronics Asia, pp. 35–36, (May 1993).
J. Van Houdt, et al., “The HIMOS Flash technology: The alternative solution for low-cost embedded Mmeory”, IEEE Proceeding of the, Vol. 91, No. 4, pp. 627–635, (April 2003).
Samuel Tuan Wang, “On the I-V characteristics of Floating-Gate Mos transistors”, IEEE Transaction on electron devices, Vol ED-26, No 9, September (1979).
Rights and permissions
Copyright information
© 2005 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
(2005). The MOSFET Transistor and the Memory Cell. In: VLSI-Design of Non-Volatile Memories. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-26500-7_3
Download citation
DOI: https://doi.org/10.1007/3-540-26500-7_3
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-20198-4
Online ISBN: 978-3-540-26500-9
eBook Packages: EngineeringEngineering (R0)