Abstract
This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.
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Acknowledgment
The author would like to thank US National Science Foundation and the Science Foundation of Ireland for funding and the assistance of former/current students and colleagues including Mr. J. Brauer, Prof. W. Butler, Prof. A. Caruso, Prof. J. M. D. Coey, Prof. A. Gupta, Prof. P. LeClair, Prof. G. Mankey, Prof. J. Moodera, Prof. R. Schad, Mr. H. Tokuch, and Dr. W. Xu.
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Szulczewski, G. (2011). Spin Polarized Electron Tunneling and Magnetoresistance in Molecular Junctions. In: Metzger, R. (eds) Unimolecular and Supramolecular Electronics I. Topics in Current Chemistry, vol 312. Springer, Berlin, Heidelberg. https://doi.org/10.1007/128_2011_223
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DOI: https://doi.org/10.1007/128_2011_223
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