Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
See for example: InAsSbP/InAs LEDs for the 3.3–5.5μm spectral range, B. Matveev et al., IEE Proc. Optoelectronics, 145, Special Issue on Mid-IR devices & materials and papers therein — (see also vol 144 for additional related papers).
High Power 4.6 μm LEDs for CO detection grown by LPE using rare earth gettering. A. Krier, H. Gao, V. Sherstnev, Yu. Yakovlev. Electronics Letters, (USA), 35, 1665–7(1999)
A.N. Baranov, A.N. Imenkov, O.P. Kapranchik, V.V. Negreskul, A.G. Chernyavskii, V.V. Sherstnev Yu.P. Yakovlev. Long-wavelength light-emitting diodes, based on InAsSbP/InAs heterostructures (λ=3.0–4.8μm) at 300K with wide-gap window. Pisma v Zhurnal Tekh.Fiziki (USSR), 16(16), p.42–47, (1990).
S. McCabe and B.D. MacCraith, Electron.Lett. 29 1719–21(1993)
S.D. Smith, A. Vass, P Bramley, J.G. Crowder and C.H. Wang, IEE proc-Optoelectronics, 144, No 5, 266 (1997)
M.K. Parry and A. Krier, Electron. Lett. 30 1968–69 (1994)
A.A. Popov, V.V. Sherstnev, Y.P. Yakovlev, A.N. Baranov and C. Alibert, Electron. Lett. 33 86–88 (1997)
A. Krier and Y. Mao, IEE Proc.Optoelectron. 144 355–59 (1997).
A.A. Popov, M.V Stepanov, V.V. Sherstnev and Y.P. Yakovlev, Tech. Phys. Lett. 24 596–98 (1997)
A. Krier & V.V. Sherstnev, J. Phys. D: Appl. Phys. 33, 101–10 (2000) Powerful interface light emitting diodes for methane gas detection.
A.A Popov, V.V. Sherstnev, Y.P. Yakovlev, A.N. Baranov and C. Alibert, ‘Powerful mid-infrared light emitting diodes for pollution monitoring’ Electron. Lett., 33 (1997) 86–88
A. Krier and Y. Mao, ‘2.5μm light emitting diodes in InAs0.36Sb0.20P0.44 /InAs f or HF detection, IEE Proc Optoelectronics 144, 355–359 (1997)
Powerful 4.6μm light emitting diodes for CO detection, A. Krier, H.H. Gao, V.V. Sherstnev & Y. Yakovlev,-J. Phys D, 32, 3117–3121 (1999)
A.A Popov, M.V. Stepanov, V.V Sherstnev, Y. P. Yakovlev ‘InAsSb light emitting diodes for the detection of CO2 (λ=4.3μm)’ Technical Phys. Lett., Vol 24, No.8, 1998 p596–598
A. Verdin, Gas Analysis Instrumentation, Wiley, New York, 1975
I. Melngailis & R.H. Rediker, J. Appl. Phys, 37,899(1966)
I. Melngailis & R.H. Rediker, Appl. Phys. Lett., 2,202 (1963)
O. Madelung, Physics of III-V compounds, Wiley, New York, (1964)
A. Andreev et al., Sov. Techn. Phys Lett., 16, 135–137(1990), Semicond. 27, 236–240 (1993)
N. P. Esina et al., J. Appl. Spectrosc. 42, 1985, 7465
A.A Popov, V.V. Sherstnev, Y.P. Yakovlev, 1.94μm LEDs for moisture content measurements, Tech. Phys. Lett., 23, 783 (1997)
H.H. Gao, A. Krier and V.V. Shertsnev, J. Phys. D — Appl. Phys. 32 (1999) 1768–1772
A. Krier, V.V. Sherstnev & H.H. Gao, A novel LED module for the detection of H2S at 3.8 μm, J. Phys. D.-Applied Phyiscs, 33, 1656, (2000)
PJP Tang et al., Appl. Phys. Lett., 72, 3473 (1998) efficient 300 K light emitting diodes at λ = 5 μm and 8 μm from InAs/InAsSb single quantum wells.
M.J. Pullin et al.., Appl. Phys. Lett., 74, 2384 (1999) Room temperature InAsSb strained-layer superlattice light emitting diodes at 4.2μm with AlSb barriers for improved carrier confinement
C. Sirtori et al.., Appl. Phys. Lett., 66, 4, (1995) Quantum cascade unipolar intersubband light emitting diodes in the 8–13μm wavelength region
J. Faist et al., Appl. Phys. Lett.,64,1144 (1994)
J. Faist et al., Appl. Phys. Lett., 65,94(1994)
T. Ashley, C.T. Elliott, N.T. Gordon, R.S. Hall, A.D. Johnson & G.J. Pryce, Appl. Phys. Lett.,64, 2433(1994)
T. Ashley, N.T. Gordon & T.J. Phillips, J. Modern Optics, 46, 1677 (1999) Optical modelling of cone concentrators for positive and negative IR emitters.
T. Ashley & C.T. Elliott, Electron. Lett., 21, 451 (1985)
T. Ashley, C.T. Elliott, N.T. Gordon, R.S. Hall, A.D. Johnson & G.J. Pryce, Infrared Phys & Technol., 36, 1037 (1996)
T. Ashley, C.T. Elliott, N.T. Gordon, R.S. Hall, A.D. Johnson & G.J. Pryce, J. Crystal growth, 159, 1100 (1996)
C. Verie & C.R. Granger, Acad. Sci. Paris, 261, 3349 (1965)
K.K. Mahavadi et al., J. Vac. Sci. & Tecjhnol., A 8, 1210 (1990)
A. Ravid & A. Zussman, G. Cinader & A. Oron, Appl. Phys. Lett., 55, 2704 (1989)
R. Zucca et al., J. Vac. Sci. & Technol., A 6, 2725 (1988).
P. Bouchut et al.., J. Vac. Sci. & Technol.,B9, 1794 (1991)
T. Ashley, C.T. Elliott, N.T. Gordon, R.S. Hall, C.D. Maxe & B.E. Matthews, Appl. Phys. Lett. 65, 2314 (1994)
W. Lo & D.E. Swets, Appl. Phys. Lett., 36, 450 (1980)
Z. Shi et al., Appl. Phys Lett., 66, 2573 (1995)
Xu J, Lambrecht A, Tacke M, IEEE Photonic Tech. Lett. 10:(2) 206–208 (1998)
Feit Z, Mak P, Woods R, et al.. Spectrochimica Acta A 52:(8) 851–855 (1996)
C.R. Pidgeon et al., Phys Rev. B. 58, 12908 (1998)
Z. Shi, Appl. Phys. Lett., 72, 1272 (1998)
T. Ashley et al., Appl. Phys. Lett., 64, 2433 (1994) and T. Ashley & C.T. Elliott, Semicond. Sci & Technol. 6, C99 (1991)
M.J. Kane et al., Mater. Res. Soc. Symp.Proc. 450, 129 (1997)
A.R. Beattie, J. Phys. Chem. Solids, 23, 1049 (1962).
M. Kane et al., “Emission efficiency in InAs LEDs controlled by surface recombination” Presented at Boston MRS conference (Dec 1996)
M.J. Kane et al., Appl. Phys. Lett., 76, 943 (2000)
M. Takeshima, Auger recombination in InAs, Jap. J. Appl. Physics 22, 491, (1983)
See for example; A.N. Baranov, T.I. Voronina, T.S. Logunova, M.A. Sipovskaya, V.V. Sherstnev, Yu.P. Yakovlev. Semiconductors, 27, (1993). Zotova NV, Karandashev SA, Matveev BA, et al.. Semiconductors, 33, 920, (1999). A.Krier, H.H.Gao, V.V.Sherstnev. Journal of Applied Physics, 85, 8419, (1999).
A. Krier, V.V. Sherstnev, Yu. Yakovlev. Journal of Physics D, 33, 101, (2000).
A. Kumar, D. Pal & D.N. Bose, J. Electronic Mater., 24, (1995) 833
M. C. Wu et al.., J. Appl. Phys. 71(1) 1992, 456
W. Gao et al.., J. Appl. Phys. 80(12) 1996, 7094
T. Bagraev, L.S. Vlasenko, K.A. Gatsoev, A.T. Gorelenok, A.V. Kamanin, V.V. Mamutin, B.V. Pushnyul, V.K. Tibilov, Y.P. Tolparov and A.E. Shubin, Sov. Phys.-Semiconductors 18(49) 1984
F. Bantien, E. Bauser & J. Weber, “Incorporation of erbium in GaAs by liquid phase epitaxy”, J. Appl. Phys., 61, (1987) 2803
Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering, A. Krier, H.H. Gao & V. Sherstnev, J. Appl. Phys., 85,(12)8419–8422 (1999).
High quality InAs grown by liquid phase epitaxy using gadolinium gettering, H. Gao, A. Krier & V. Sherstnev, Semicond. Sci & Technol. 14, 441–5 (1999), IOP Publishing
N.V. Zotova et al.., The first intenational conference on mid-optoeletronics-materials and devices, MIOMD Lancaster, 1996
R. D. Grober, et al.., Physics Review B, vol. 43, No. 14, 1991, 11732
Z.M. Fang, et al.., J.Appl. Phys. 67(11), 1990, 7034
Y. Lacroix, et al.., Appl. Phys. Lett. 66(9) 1995, 1101
R. D. Grober et al.., J. Appl. Phys. 65(10) 1989, 4079
P.J.P Tang, et al.., Semicond. Sci. Technol. 8, 1983, 2135
H.H. Gao, A. Krier and V.V. Shertsnev, J. Phys. D — Appl. Phys. 32 (1999) 1768–1772
S. Kim, M. Erdtmann, D. Wu, E. Kass, H. Yi, J. Diaz, and M. Razeghi, Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor deposition. Appl.Phys.Letters 69(11), pp. 1614–1616 (199b).
A. Krier, H.H. Gao, V.V. Sherstnev & Y. Yakovlev, High Power 4.6µm light emitting diodes for CO detection, J. Phys D, 32, 3117–3121 (1999), IOP Publishing
A.N. Baranov, T.I. Voronina, A.A. Gorelenok, T.S. Logunova, A.M. Litvak, M.A. Sipovskaya, S.P. Starosel’tseva, V.A. Tikhomirova, V.V. Sherstnev, Yu.P. Yakovlev. Semiconductors, 26, 905, (1992).
A. Krier, V.V. Sherstnev, The influence of melt purification and structure defects on mid-infrared light emitting diodes, J. Phys. D-Applied Physics, 36(13), 1484, 2003, IOP Publishing
S.A. Choulis, A. Andreev, M. Merrick, S. Jin, D.G. Clarke, B.N. Murdin, A.R. Adams, A. Krier, V.V. Sherstnev, Phys. Stat. Sol. B-Basic Research 235(2), 312 (2003), John Wiley
A. R. Adams, M. Silver, and J. Allam, Semiconductors and Semimetals, Vol. 55, Academic, London, (1998), pp. 301–331.
G. G. Zegrya and A. D. Andreev, JETP 82, 328, (1996).
G. G. Zegrya and A. D. Andreev, Appl. Phys. Lett. 67, 2681, (1995).
S.A. Choulis, A. Andreev, M. Merrick, A.R. Adams, B.N. Murdin, A. Krier, V.V. Sherstnev, Appl. Phys. Lett, 82(8), 1149 (2003), American Institue of Physics
T. Ashley, D.T. Dutton, C.T. Elliott, N.T. Gordon & T.J. Phillips, SPIE conference 3289 “Micro-optics Integration and assemblies” part of Phonics West meeting, San Jose, CA, USA, 26–30 Jan 1998
T. Ashley, N.T. Gordon & T.J. Phillips, J. modern Optics, 46(11), 1677 (1999)
I. Schnitzer et al., Appl. Phys. Lett., 63, 2174 (1993)
Hadji E. et.al.: Resonant cavity light emitting diodes for the 3–5µm range, Solid-State Electronics, Vol. 40, pp.473–6, 1996
P.N. Stavrinou et al., J. Appl. Phys., 86,3475 (1999)
H. De Neve et al., Impact of planar microcavity effects on light extraction-Part I: Basic concepts and analytical trends, IEEE J Quantum Elect 34:(9) 1612–1631 (1998)
Baranov AN, Rouillard Y, Boissier G, et al.. Electron Lett 34:(3) 281–282 (1998)
N.T. Gordon, C.L. Jones & D.J. Purdy, Infrared Physics., 31, 599 (1991)
B. Matveev et al., IEE Proc. Optoelectronics 145, 254 (1998)
A. Sugimura, “Band to band Auger effect in GaSb and InAs lasers”, J. Appl. Phys. Vol. 51, No.8, 4405–4411(1980).
M. Takeshima, “Disorder-enhanced Auger recombination in III-V alloys” J. Appl. Phys. Vol.49, No12, pp6118–6124.(1978)
S. Chinn, P. Zory, and A. Reisinger, IEEE J. Quantum Electron., QE-24 2191 (1988)
B. Gel’mont, Z. Sokolova, and I. Yassievich, Sov. Phys. Semicond. 16, 382 (1982)
E. R. Glaser, B. R. Bennett, B. V. Shanabrook, and R. Magno, Appl. Phys. Lett. 68, 3614 (1996).
G. Park, O. B. Shchekin, d. L. Huffaker, and D. G. Deppe, Appl. Phys. Lett. 73, 3351 (1998).
E. Alphandery, R. J. Nicholas, N. J. Mason, B. Zhang, P. Mock, and G. R. Booker, Appl. Phys. Lett. 74, 2041 (1999).
A. Krier, Z. Labadi, and A. Hammiche, J Phys D: Appl. Phys. 32, 2587 (1999).
K. Mukai, N. Ohtsuka, H. Shoji, and M. Sugawara, Appl. Phys. Lett. 68, 3013 (1996).
S. Raymond, P. Hawrylak, C. Gould, S. Fafard, A. Sachrajda, M. Potemski, Wojs, S. Charbonneau, D. Leonard, P. M. Petroff, and J. L. Merz, Solid State Commun. 101, 883 (1997).
Raymond, X. Guo, J. K. Merz, and S. Fafard, Phys. Rev. B, 59, 7624 (1999).
S. Fafard, Appl. Phys. Lett. 76, 2707 (2000).
J. Oswald, K. Kuldová, J. Zeman, E. Hulicius, S. Jullian, and M. Potemski, Materials Science and Engineering B, 69–70, 318 (2000).
A. Krier, X. L. Huang, and A. Hammiche, Appl. Phys. Lett. 77, 3791 (2000)
A. Krier, X-L Huang, Physica E, 15, 159 (2002)
P. J. P. Tang, C. C. Philips, and R. A. Stradling, Semicond. Sci. Technol. 8, 2135 (1993).
P. J. P. Tang, M. J. Pullin, S. J. Chung, C. C. Phillips, R. A. Stradling, A. G. Norman, Y. B. Li and L. Hart, Semicond. Sci. Technol. 10, 1177 (1995).
R. Grober & H.D. Drew, J. Appl. Phys. 65, 4079 (1989)
S. H. Wei, and A. Zunger, Phys. Rev. B, 52, 12039 (1995).
Y. B. Li, D. J. Bain, L. Hart, M. Livingstone, C. M. Ciesla, M. J. Pullin, P. J. Tang, W. T. Yuen, I. Galbraith, C. C. Phillips, C. R. Pidgeon, and R. A. Stradling, Phys. Rev. B, 55, 4589 (1997).
V.V. Sherstnev, A. Krier, G. Hill, High tunability and superluminescence in InAs mid infrared light emitting diodes, J. Appl. Phys. D-Applied Physics, 35, 196, (2002) IOP Publishing
A. Krier, V.V. Sherstnev, D. Wright, A.M. Monakhov, G. Hill, Electron. Lett., 39(12), 916 (2003) IEE
S.A. Backes, J.R.A. Cleaver, A.P. Heberle, J.J. Baumberg and K. Kohler, Appl. Phys Lett., 74, 176 (2000)
S. Chang, B. N. B. Rex, R.K. Chang, G. Chong and L.J. Guido, Appl. Phys. Lett., 75, 166 (2000)
S.X. Jin, J. Li, J.Z. Li, J.Y. Lin and H.X. Jiang, Appl. Phys. Lett., 76, 631 (2000)
R.A. Mair, K.C. Zeng, J.Y. Lin, H.X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoc, and M. A, Khan, Appl. Phys. Lett., 72,1530 (1998).
R.P. Wang and MM. Dumitrescu, J. Appl. Phys., 81, 3391 (1997)
Powerful interface light emitting diodes for methane gas detection, A. Krier & V.V. Sherstnev, J. Phys. D: Appl. Phys. 33, 101–106 (2000)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2006 Springer-Verlag London Limited
About this chapter
Cite this chapter
Krier, A., Huang, X.L., Sherstnev, V.V. (2006). Mid-infrared Electroluminescence in LEDs Based on InAs and Related Alloys. In: Krier, A. (eds) Mid-infrared Semiconductor Optoelectronics. Springer Series in Optical Sciences, vol 118. Springer, London . https://doi.org/10.1007/1-84628-209-8_11
Download citation
DOI: https://doi.org/10.1007/1-84628-209-8_11
Publisher Name: Springer, London
Print ISBN: 978-1-84628-208-9
Online ISBN: 978-1-84628-209-6
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)