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INELASTIC ELECTRON TUNNELLING SPECTROSCOPY (IETS) STUDY OF HIGH-K DIELECTRICS

  • Conference paper
Defects in High-k Gate Dielectric Stacks

Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 220))

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Abstract

Inelastic electron tunnelling spectroscopy (IETS) will be shown to be a simple and powerful technique 1 to study microstructures and defects in Metal-Insulator-Semiconductor (MIS) systems where the insulator is sufficiently thin to allow significant tunnelling current to flow through. The information that may be revealed by IETS arises from a wide variety of inelastic interactions, including interactions with phonons, various bonding vibrations, bonding defects, and impurities.

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Author information

Authors and Affiliations

  1. Center for Microelectronic Materials and Structures, and Department of Electrical Engineering, Yale University, New Haven, CT, 06520, USA

    T.P. MA, WEI HE & MIAOMIAO WANG

Authors
  1. T.P. MA
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  2. WEI HE
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  3. MIAOMIAO WANG
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Editor information

Editors and Affiliations

  1. IBM T.J.Watson Research Center, New York, NY, USA

    Evgeni Gusev

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© 2006 Springer

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MA, T., HE, W., WANG, M. (2006). INELASTIC ELECTRON TUNNELLING SPECTROSCOPY (IETS) STUDY OF HIGH-K DIELECTRICS. In: Gusev, E. (eds) Defects in High-k Gate Dielectric Stacks. NATO Science Series II: Mathematics, Physics and Chemistry, vol 220. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4367-8_5

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  • DOI: https://doi.org/10.1007/1-4020-4367-8_5

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-4365-9

  • Online ISBN: 978-1-4020-4367-3

  • eBook Packages: EngineeringEngineering (R0)

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