Abstract
Sputtering, stress evolution and surface evolution due to ion bombardment of silicon are studied in this work. Impacts due to argon ions at normal incidence with beam energies of 500eV and 700eV are simulated using Molecular Dynamics (MD). Impacts on (001) silicon surface are simulated on a silicon crystal that is initially undamaged and is 5.43nm × 5.43nm ×5.43nm in dimension. The (001) silicon surface is tiled in order to impose periodic boundary conditions during the MD simulation. Converged statistical description of observables is obtained by performing multiple randomized simulations, with each randomized simulation involving more than 100 ion impacts. A planar radial distribution function and a structure factor-like crystallinity measure are used to study the structure and damage evolution. Stresses are calculated using a force balance method and approach 1.7GPa and 1.3GPa in the 700eV and 500eV cases respectively after about 125 impacts. Continuum descriptions of the damaged surface are obtained from atomistic coordinate data using a silicon probe atom method.
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Kalyanasundaram, N., Moore, M.C., Freund, J.B., Johnson, H.T. (2006). Structure and Stress Evolution Due to Medium Energy Ion Bombardment of Silicon. In: Chuang, T.J., Anderson, P.M., Wu, M.K., Hsieh, S. (eds) Nanomechanics of Materials and Structures. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3951-4_18
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DOI: https://doi.org/10.1007/1-4020-3951-4_18
Publisher Name: Springer, Dordrecht
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