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High-K Candidates for Use as the Gate Dielectric in Silicon Mosfets

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Thin Films and Heterostructures for Oxide Electronics

Part of the book series: Multifunctional Thin Film Series ((MUTF))

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  1. P.H. Tan

    Present address: TPC Malaysia, 11900, Penang, Malaysia

  2. K.J. Hubbard

    Present address: Kagan Binder, Stillwater, MN, 55082-5021, USA

Authors and Affiliations

  1. Department of Materials Science and Engineering, Penn State University, University Park, PA, 16803-6602, USA

    D.G. Schlom, C.A. Billman, J.H. Haeni, J. Lettieri, P.H. Tan, S. Völk & K.J. Hubbard

  2. On sabbatical at Experimentalphysik VI, Center for Electronic Correlations and Magnetism, Institute of Physics, Augsburg University, 86135, Augsburg, Germany

    D.G. Schlom & J.H. Haeni

  3. Experimentalphysik VI, Center for Electronic Correlations and Magnetism, Institute of Physics, Augsburg University, 86135, Augsburg, Germany

    R.R.M. Held

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Schlom, D. et al. (2005). High-K Candidates for Use as the Gate Dielectric in Silicon Mosfets. In: Thin Films and Heterostructures for Oxide Electronics. Multifunctional Thin Film Series. Springer, Boston, MA. https://doi.org/10.1007/0-387-26089-7_2

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