Application of FIB in Combination with Auger Electron Spectroscopy

Abstract

This chapter highlights practical applications that combine Auger electron spectroscopy (AES) and focused ion beam (FIB) technology. The examples presented are derived exclusively from the semiconductor industry but the methods described are generally applicable to a variety of industries. The analytical power resulting from the combination of FIB and AES stem from simple concepts; FIB technology provides a controlled site specific method to create a surface (i.e., x-sections and thin membranes) while AES is a surface analytical technique that can yield elemental, and to a varying degree chemical, information from the same near-surface region (~10–100Å) of the FIB cut face at moderate lateral spatial resolution (~80–250 Å). Practical operational tips, as well as a discussion of limitations and artifacts to avoid support the examples. Several of the examples presented in this chapter convey the power of combining AES and FIB on an intuitive graphical level.