7. Conclusion
In this chapter we have shown that Si inductors above 3 GHz are feasible and in fact desirable. Their application, though, necessitates accurate and efficient analysis of the various loss mechanisms present in the Si IC. We have also shown that differential operation is superior to single-ended designs for fully-integrated VCOs. The phase noise of the oscillator has been calculated and verified with SpectreRF simulations. Measurements on a practical design are close to expectations.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
Rights and permissions
Copyright information
© 2000 Kluwer Academic Publishers
About this chapter
Cite this chapter
(2000). Voltage Controlled Oscillators. In: Design, Simulation and Applications of Inductors and Transformers for Si RF ICs. The International Series in Engineering and Computer Science, vol 586. Springer, Boston, MA. https://doi.org/10.1007/0-306-47038-1_9
Download citation
DOI: https://doi.org/10.1007/0-306-47038-1_9
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-7923-7986-7
Online ISBN: 978-0-306-47038-7
eBook Packages: Springer Book Archive