Abstract
Subcircuits of memories, apart from the memory cells and sense amplifiers, are similar to those component circuits which are used in traditional digital and analog circuits. State-of-the-art requirements in combining very high circuit performances and packing densities, nevertheless, place the constituent subcircuits of CMOS memories in the forefront of the progress. For CMOS memory designs and analyses, this chapter provides a unique insight to the quasi-stationary transmission-line-like behavior of the array wires, to the memory specific aspects of the peripheral circuits, and to the reductions of the harmful signal reflections, and distortions, reference- and timing-inaccuracies and power-line bounces.
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© 2002 Kluwer Academic Publishers
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(2002). Memory Constituent Subcircuits. In: Cmos Memory Circuits. Springer, Boston, MA. https://doi.org/10.1007/0-306-47035-7_4
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DOI: https://doi.org/10.1007/0-306-47035-7_4
Publisher Name: Springer, Boston, MA
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