Abstract
We report on the optical and electrical properties of n-ZnO/p/-AlGaN heterojunctions. Ga doped n-type ZnO layers were grown using chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers. AlGaN epitaxial layers with 12 at.% Al were grown on 6H-SiC by hydride vapor phase epitaxy. Rectifying diode-like behavior with a threshold voltage of 3.2 V was achieved. Intense ultraviolet electroluminescence peaking at a wavelength of 390 nm was observed at 300 and 500 K as a result of hole-injection from the n-ZnO layer into the p-AlGaN layer of the heterostructure.
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Kalinina, E.V. et al. (2005). ZnO/AlGaN Ultraviolet Light Emitting Diodes. In: Nickel, N.H., Terukov, E. (eds) Zinc Oxide — A Material for Micro- and Optoelectronic Applications. NATO Science Series II: Mathematics, Physics and Chemistry, vol 194. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3475-X_18
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DOI: https://doi.org/10.1007/1-4020-3475-X_18
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-3473-2
Online ISBN: 978-1-4020-3475-6
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