Abstract
We report an optical characterization of PtSi films for thermoelectric device applications which was done by using nondestructive spectroscopic ellipsometry (SE). A Pt monolayer and a Pt-Si multilayer which consisted of three pairs of Pt and Si layers were deposited on p-doped-silicon substrates by using sputtering method; then, rapid annealing process was done to form PtSi films through intermixing of Pt and Si atoms at the interface. Pseudodielectric function data < ε > = < ε 1 > + i < ε 2 > for the PtSi/Si samples were obtained from 1.12 to 6.52 eV by using spectroscopic ellipsometry. Employing the Tauc-Lorentz and the Drude models, determined the dielectric function (ε) of the PtSi films. We found that the composition ratio of Pt:Si was nearly 1:1 for the PtSi monolayer and we observed transitions between occupied and unoccupied states in the Pt 5d states. We also observed the formation of PtSi layers in the Pt-Si multilayer sample. The SE results were confirmed by the transmission electron microscopy and energy dispersive X-ray spectroscopy.
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References
M. Schwall and B. Balke, Appl. Phys. Lett. 98, 042106 (2011).
United States Geological Survey, Mineral commodity summaries 2002, (Washington, DC, U.S. Government Printing Office), p. 169. Retrieved from http://minerals.usgs.gov/minerals/pubs/mcs/2002/mcs 2002.pdf.
T. L. Li, J. S. Park, S. D. Gunapala, E. W. Jones, H. M. Del Castillo, M. M. Weeks and P. W. Pellegrini, IEEE Electron Device Lett. 16, 94 (1995).
T. L. Lin, J. S. Park, T. George, E. W. Jones, R. W. Fathauer and J. Maserjian, Appl. Phys. Lett. 62, 3318 (1993).
B. Aslan and R. Turan, Infrared Phys. Tech. 43, 85 (2002).
S. Fujino, T. Miyoshi, M. Yokoh and T. Kitahara, in Proceedings of SPIE, edited by I. J. Spiro (California, United States of America, August 7, 1989), Vol. 1157, p. 136.
M. K. Niranjan, S. Zollner, L. Kleinman and A. A. Demkov, Phys. Rev. B 73, 195332 (2006).
V. W. Chin, M. A. Green and J. W. V. Storey, Solid-State Electron. 36, 1107 (1993).
W. C. Choi, D. S. Jun, S. J. Kim, M. C. Shin and M. Y. Jang, Energy 82, 180 (2015).
S. Pettersson and G. D. Mahan, Phys. Rev. B 42, 7386 (1990).
D. G. Cahill, W. K. Ford, K. E. Goodson, G. D. Mahan, A. Majumdar, H. J. Maris, R. Merlin and S. R. Phillpot, J. Appl. Phys. 93, 793 (2003).
S. T. Huxtable et al., Appl. Phys. Lett. 80, 1737 (2002).
C. R. Nave, Abundances of the Elements in the Earth’s Crust, (Georgia State University, 2013). Retrieved from http://hyperphysics.phyastr. gsu.edu/hbase/tables/elabund.html.
D. E. Aspnes and A. A. Studna, Appl. Opt. 14, 220 (1975).
R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North-Holland, Amsterdam, 1976).
G. E. Jellison and F. A. Modine, Appl. Phys. Lett. 69, 371 (1996).
H. Jujiwara and M. Kondo, Phys. Rev. B 71, 075109 (2005).
H. Bentmann, A. A. Demkov, R. Gregory and S. Zollner, Phys. Rev. B 78, 205302 (2008).
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Le, V.L., Kim, T.J., Park, H.G. et al. Optical characterization of the PtSi/Si by using spectroscopic ellipsometry. Journal of the Korean Physical Society 69, 291–296 (2016). https://doi.org/10.3938/jkps.69.291
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DOI: https://doi.org/10.3938/jkps.69.291