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Size control of nanocrystals in InGaZnO4 thin films fabricated by using the sol-gel method

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Abstract

We report the structural properties of InGaZnO4 (IGZO) thin films prepared by using the sol-gel method. The structural properties of IGZO thin films were controlled by using the film thickness and thermal annealing temperature. In this study, the crystallization temperature of amorphous IGZO thin films was observed to be about 700 °C. Also, we observed that the crystal size of IGZO thin films increased as the thickness and the annealing temperature were increased. In addition, we could observe that the atomic ratio of In, Ga and Zn of the IGZO thin film was slightly different from the molar ratio of a previous IGZO sol-gel solution (In:Ga:Zn = 1:1:1) post-annealed at 900 °C because In and Zn are more volatile than Ga. The study of the crystallization of amorphous IGZO thin films provides an understanding of the growth mechanisms and thermal annealing effects for IGZO nanocrystals.

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Authors and Affiliations

  1. Research Center for Dielectric Advanced Matter Physics and Department of Physics Education, Pusan National University, Busan, 609-735, Korea

    S. J. Seo & J. H. Cho

  2. Research Center for Dielectric Advanced Matter Physics, Department of Physics, Pusan National University, Busan, 609-735, Korea

    Y. H. Jang & C. H. Kim

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  1. S. J. Seo
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  2. J. H. Cho
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  3. Y. H. Jang
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  4. C. H. Kim
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Correspondence to J. H. Cho.

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Seo, S.J., Cho, J.H., Jang, Y.H. et al. Size control of nanocrystals in InGaZnO4 thin films fabricated by using the sol-gel method. Journal of the Korean Physical Society 60, 267–271 (2012). https://doi.org/10.3938/jkps.60.267

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  • DOI: https://doi.org/10.3938/jkps.60.267

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