Abstract
The results of the theoretical study of damage and nonlinear light absorption mechanisms in transparent materials, i.e., wide band-gap semiconductors and insulators, are presented. It is shown that ablation processes in transparent materials exposed to laser pulses with intensity of the order of tens of TW/cm2 and pulse duration of the order of hundreds femtoseconds are efficient for various surface treatment technologies. The mechanism of tunneling nonlinear light absorption is studied. Ablation thresholds of GaN and other transparent materials such as sapphire (Al2O3), vitreous SiO2, and the same SiO2 with Ge impurity are determined. It is found that the ablation threshold depends on the band gap (absorption band edge) E g as E 3 g , which is in good agreement with experiment.
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Original Russian Text © I.N. Zavestovskaya, N.A. Kozlovskaya, O.N. Krokhin, 2015, published in Kratkie Soobshcheniya po Fizike, 2015, Vol. 42, No. 4, pp. 29–37.
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Zavestovskaya, I.N., Kozlovskaya, N.A. & Krokhin, O.N. Laser technologies for processing wide band-gap semiconductors and insulators: Nonlinear absorption mechanisms. Bull. Lebedev Phys. Inst. 42, 110–114 (2015). https://doi.org/10.3103/S1068335615040053
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DOI: https://doi.org/10.3103/S1068335615040053