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Precision depth profiling of nanoelectronic structures using secondary molecular ions in secondary-ion mass spectrometry

  • Proceedings of the XVII Russian Symposium on Scanning Electron Microscopy and Analytical Methods of Investigation Applied for Solid States Physics
  • Published:
Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

A method for improving SIMS depth profiling by recording secondary molecular ions is proposed. Experimental studies of SiGe and AlGaAs nanometer-scale test structures, and of boron-doped Si with an energy of 5 keV showed improved secondary-ion mass spectroscopy depth resolution when recording secondary molecular ions. A physical model that considers the molecular ion dissociation energy to be a decisive parameter is discussed.

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Authors and Affiliations

  1. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432, Russia

    A. N. Pustovit & A. F. Vyatkin

Authors
  1. A. N. Pustovit
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  2. A. F. Vyatkin
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Correspondence to A. N. Pustovit.

Additional information

Original Russian Text © A.N. Pustovit, A.F. Vyatkin, 2012, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2012, Vol. 76, No. 9, pp. 1095–1098.

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Pustovit, A.N., Vyatkin, A.F. Precision depth profiling of nanoelectronic structures using secondary molecular ions in secondary-ion mass spectrometry. Bull. Russ. Acad. Sci. Phys. 76, 983–986 (2012). https://doi.org/10.3103/S1062873812090225

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  • DOI: https://doi.org/10.3103/S1062873812090225

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