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Comparative analysis of CMOS adders circuits based on 10 transistors

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Abstract

Development of digital signal processing devices has led to appearance of a series of CMOS circuit designs of arithmetic and logic blocks with a small number of transistors. In this paper we suggest a classification of full single-bit CMOS adders, circuits of which consist of 10 transistors. The comparison of main characteristics of adders has been carried out based on the results of circuit simulation for 0.18-micron MOS technology and the most promising implementations have been marked out.

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References

  1. K. Yano, T. Yamanaka, T. Nishida, M. Saito, K. Shimohigashi, A. Shimizu, “A 3.8-ns CMOS 16×16-b multiplier using complementary pass-transistor logic,” IEEE J. Solid-State Circuits 25, No. 2, 388 (Apr. 1990), DOI: 10.1109/4.52161.

    Article  Google Scholar 

  2. N. H. E. Weste, D. Harris, CMOS VLSI Design: A Circuits and Systems Perspective (Pearson Education, 2005).

    Google Scholar 

  3. Reto Zimmermann, Wolfgang Fichtner, “Low-power logic styles: CMOS versus pass-transistor logic,” IEEE J. Solid-State Circuits 32, No. 7, 1079 (Jul. 1997), DOI: 10.1109/4.597298.

    Article  Google Scholar 

  4. H. A. Mahmoud, M. A. Bayoumi, “A 10-transistor low-power high-speed full adder cell,” in Proc. of IEEE Int. Symp. on Circuits and Systems, ISCAS, Jun. 1999, Orlando, FL (IEEE, 1999), Vol. 1, pp. 43–46, DOI: 10.1109/ISCAS.1999.777801.

    Google Scholar 

  5. R. Shalem, E. John, L. K. John, “A novel low power energy recovery full adder cell,” in Proc. of 9th Great Lakes Symp. VLSI (1999), pp. 380–383.

    Chapter  Google Scholar 

  6. Lu Junming, Shu Yan, Lin Zhenghui, Wang Ling, “A novel 10-transistor low-power high-speed full adder cell,” in Proc. of 6th Int. Conf. on Solid-State and Integrated-Circuit Technology, 22–25 Oct. 2001 (IEEE, 2001), Vol. 2, pp. 1155–1158, DOI: 10.1109/ICSICT.2001.982104.

    Google Scholar 

  7. A. A. Fayed, M. A. Bayoumi, “A low power 10-transistor full adder cell for embedded architectures,” in Proc. of IEEE Int. Symp. on Circuits and Systems, ISCAS, 6–9 May 2001, Sydney, NSW (IEEE, 2001), Vol. 4, pp. 226–229, DOI: 10.1109/ISCAS.2001.922213.

    Google Scholar 

  8. Hung Tien Bui, Yuke Wang, Yingtao Jiang, “Design and analysis of low-power 10-transistor full adders using novel XOR-XNOR gates,” IEEE Trans. Circuits Syst. II: Analog Digital Signal Process. 49, No. 1, 25 (Jan. 2002), DOI: 10.1109/82.996055.

    Article  Google Scholar 

  9. Fartash Vasefi, Z. Abid, “Low power n-bit adders and multiplier using lowest-number-of-transistor 1-bit adders,” in Proc. of Canadian Conf. on Electrical and Computer Engineering, 1–4 May 2005, Saskatoon, Sask. (IEEE, 2005), pp. 1731–1734, DOI: 10.1109/CCECE.2005.1557317.

    Google Scholar 

  10. Po-Ming Lee, Chia-Hao Hsu, Yun-Hsiun Hung, “Novel 10-T full adders realized by GDI structure,” in Proc. of Int. Symp. on Integrated Circuits, ISIC, 26–28 Sept. 2007, Singapore (IEEE, 2007), pp. 115–118, DOI: 10.1109/ISICIR.2007.4441810.

    Google Scholar 

  11. Jin-Fa Lin, Ming-Hwa Sheu, Yin-Tsung Hwang, “Low-power and low-complexity full adder design for wireless base band application,” in Proc. of Int. Conf. on Communications, Circuits and Systems, 25–28 June 2006, Guilin (IEEE, 2006), Vol. 4, pp. 2337–2341, DOI: 10.1109/ICCCAS.2006.285145.

    Article  Google Scholar 

  12. Jin-Fa Lin, Yin-Tsung Hwang, Ming-Hwa Sheu, Cheng-Che Ho, “A novel high-speed and energy efficient 10-transistor full adder design,” IEEE Trans. Circuits Syst. I: Regular Papers 54, No. 5, 1050 (May 2007), DOI: 10.1109/TCSI.2007.895509.

    Article  Google Scholar 

  13. Jin-Fa Lin, Yin-Tsung Hwang, Ming-Hwa Sheu, “Low power 10-transistor full adder design based on degenerate pass transistor logic,” in Proc. of IEEE Int. Symp. on Circuits and Systems, ISCAS, 20–23 May 2012, Seoul (IEEE, 2012), pp. 496–499, DOI: 10.1109/ISCAS.2012.6272074.

    Google Scholar 

  14. Subodh Wairya, Rajendra Kumar Nagaria, Sudarshan Tiwari, “Comparative performance analysis of XOR-XNOR function based high-speed CMOS full adder circuits for low voltage VLSI design,” Int. J. VLSI design & Commun. Syst. 3, No. 2, 221 (2012), http://airccse.org/journal/vlsi/papers/3212vlsics19.pdf.

    Article  Google Scholar 

  15. Jyh-Ming Wang, Sung-Chuan Fang, Wu-Shiung Feng, “New efficient designs for XOR and XNOR functions on the transistor level,” IEEE J. Solid-State Circuits 29, No. 7, 780 (Jul. 1994), DOI: 10.1109/4.303715.

    Article  Google Scholar 

  16. M. Vesterbacka, “A new six-transistor CMOS XOR circuit with complementary output,” in Proc. of 42nd Midwest Symp. on Circuits and Systems, 1999, Las Cruces, NM (IEEE, 1999), Vol. 2, pp. 796–799, DOI: 10.1109/MWSCAS.1999.867755.

    Google Scholar 

  17. D. V. Morozov, “Circuit engineering of modern digital circuits with low power consumption,” St. Petersburg State Polytechnical University Journal. Computer Science. Telecommunication and Control Systems 3, No. 60, 111 (2008).

    Google Scholar 

  18. D. V. Morozov, M. M. Pilipko, “A circuit implementation of a single-bit CMOS adder,” Russian Microelectronics 42, No. 2, 113 (2013), DOI: 10.1134/S106373971302008X.

    Article  Google Scholar 

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Correspondence to M. M. Pilipko.

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Original Russian Text © M.M. Pilipko, D.V. Morozov, 2014, published in Izv. Vyssh. Uchebn. Zaved., Radioelektron., 2014, Vol. 57, No. 9, pp. 42–54.

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Pilipko, M.M., Morozov, D.V. Comparative analysis of CMOS adders circuits based on 10 transistors. Radioelectron.Commun.Syst. 57, 418–427 (2014). https://doi.org/10.3103/S0735272714090040

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  • DOI: https://doi.org/10.3103/S0735272714090040

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