Abstract
In this study, we present the results of studies of n-GaAs〈Sn〉 with simple ohmic contacts in the temperature range of 30–200°C. It was found that, at temperature T > 30°C, this structure generates current (up to 0.018 μA) and voltage (up to 1.2 mV) and also has rectifying properties.
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Original Russian Text © A.Yu. Leiderman, A.S. Saidov, M.M. Hashaev, U.Kh. Rakhmonov, 2012, published in Geliotekhnika, 2012, No. 3, pp. 12–16.
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Leiderman, A.Y., Saidov, A.S., Hashaev, M.M. et al. Thermovoltaic processes in gallium arsenide doped with tin. Appl. Sol. Energy 48, 165–168 (2012). https://doi.org/10.3103/S0003701X12030085
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DOI: https://doi.org/10.3103/S0003701X12030085