Abstract
Electrical and photoelectric properties of a-Si(H) films doped by rare-earth metals were investigated. Nd, Sm, Gd, Tb, Dy, Ho, and Yb dopant atoms were shown to generate an acceptor type band near to the middle of the mobility gap of a-Si(H). Eu dopant atoms generate a donor-type band in the mobility gap of a-Si(H). Eu, Dy and Yb dopant atoms intensify photoconduction of a-Si(H) whereas Nd, Sm, Gd, Tb, and Ho dopes inhibit the photoconduction.
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Original Russian Text © V.A. Bordovskii, A.V. Marchenko, M.M. Mezdrogina, A.S. Naletko, P.P. Seregin, A.D. Dashina, 2012, published in Fizika i Khimiya Stekla.
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Bordovskii, V.A., Marchenko, A.V., Mezdrogina, M.M. et al. Defect centers of rare-earth metals in a-Si(H). Glass Phys Chem 38, 228–233 (2012). https://doi.org/10.1134/S1087659612020034
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DOI: https://doi.org/10.1134/S1087659612020034