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Two-electron tin centers formed in chalcogenide glasses as a result of nuclear transformations

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Abstract

The 119mSn impurity atoms formed as a result of the radioactive transformation of the 119mmSn parent atoms in the structure of glasses in the As-S and As-Se systems and the As2Te3 glass are involved in the glass composition in the form of Sn4+ ions. The 119mSn impurity atoms formed after the radioactive decay of the 119Sb atoms in the structure of glasses in the As-S and As-Se systems are located in the arsenic sites and play the role of two-electron centers with a negative correlation energy. For the As2Te3 glass, the 119mSn atoms formed in a similar manner are electrically inactive. The larger part of the 119mSn daughter atoms, which are formed after the radioactive decay of the 119mTe parent atoms in glasses of the As-S and As-Se systems and in the As2Te3 glass, are located in the chalcogen sites and are electrically inactive. The significant recoil energy of the daughter atoms in the case of decay of the 119mTe atoms leads to the appearance of displaced 119mSn atoms.

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References

  1. Anderson, P.W., Model for Electronic Structure of Amorphous Semiconductors, Phys. Rev. Lett., 1975, vol. 34, no. 15, pp. 953–955.

    Article  Google Scholar 

  2. Elektronnye yavleniya v khal’kogenidnykh stekloobraznykh poluprovodnikakh (Electronic Phenomena in Chalcogenide Vitreous Semiconductors), Tsendin, K.D., Ed., St. Petersburg: Nauka, 1996 [in Russian].

    Google Scholar 

  3. Bordovsky, G.A., Marchenko, A.V., Seregin, P.P., and Terukov, E.I., The Effect of Amorphization on the Local Structure of Arsenic Chalcogenides, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2009, vol. 43, no. 1, pp. 7–10 [Semiconductors (Engl. transl.), 2009, vol. 43, no. 1, pp. 4–6].

    Google Scholar 

  4. Bordovskii, G.A., Nemov, S.A., Marchenko, A.V., Seregin, P.P., and Zaitseva, A.V., M össbauer U Centers as Tools for Studying the Bose Condensation in Semiconductors, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2008, vol. 42, no. 10, pp. 1172–1179 [Semiconductors (Engl. transl.), 2008, vol. 42, no. 10, pp. 1153–1160].

    Google Scholar 

  5. Seregin, N.P., Seregin, P.P., Nemov, S.A., and Yanvareva, A.Yu., Antistructural Defects in Lead Chalcogenides, J. Phys.: Condens. Matter, 2003, vol. 15, pp. 7591–7597.

    Article  CAS  Google Scholar 

  6. Bordovsky, G.A., Marchenko, A.V., Seregin, P.P., Smirnova, N.N., and Terukov, E.I., Determination of the Composition of Binary Chalcogenide Glasses by X-Ray Fluorescence Analysis, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2010, vol. 44, no. 1, pp. 26–29 [Semiconductors (Engl. transl.), 2010, vol. 44, no. 1, pp. 24–27].

    Google Scholar 

  7. Bordovsky, G.A., Terukov, E.I., Anisimova, N.I., Marchenko, A.V., and Seregin, P.P., Local Structure of Germanium-Sulfur, Germanium-Selenium, and Germanium-Tellurium Vitreous Alloys, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2009, vol. 43, no. 9, pp. 1232–1236 [Semiconductors (Engl. transl.), 2009, vol. 43, no. 9, pp. 1193–1197].

    Google Scholar 

  8. Seregin, P.P., Fizicheskie osnovy messbauerovskoi spektroskopii (Physical Principles of Mössbauer Spectroscopy), St. Petersburg: St. Petersburg State Polytechnical University, 2002 [in Russian].

    Google Scholar 

  9. Su, T., Hari, P., Ahn, E., Taylor, P.C., Kuhns, P.L., Moulton, W.G., and Sullivan, N.S., Asymmetries of Local Arsenic Bonding Sites in AsxS1 − x and AsxSe1 − x Glasses, Phys. Rev. B: Condens. Matter, 2003, vol. 67, article 085 203 (14 pages).

  10. Korneva, I.P., Sinyavskii, N.Ya., Ostafin, M., and Nogaj, V., Spectra of Nuclear Quadrupole Resonance in Vitreous Semiconductors, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2006, vol. 40, no. 9, pp. 1120–1122 [Semiconductors (Engl. transl.), 2006, vol. 40, no. 9, pp. 1093–1095].

    Google Scholar 

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Correspondence to P. P. Seregin.

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Original Russian Text © G.A. Bordovsky, A.V. Marchenko, P.P. Seregin, H.M. Ali, P.V. Gladkikh, M.Yu. Kozhokar’, 2010, published in Fizika i Khimiya Stekla.

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Bordovsky, G.A., Marchenko, A.V., Seregin, P.P. et al. Two-electron tin centers formed in chalcogenide glasses as a result of nuclear transformations. Glass Phys Chem 36, 652–656 (2010). https://doi.org/10.1134/S1087659610060027

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  • DOI: https://doi.org/10.1134/S1087659610060027

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