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Formation of nanosized oxide films via thermal oxidation of Co3O4/InP heterostructures

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Abstract

Modification of InP film with magnetron-deposited 30 nm nanolayer of Co3O4 has resulted in the transit mechanism of thermal oxidation of the semiconductor and formation of nanosized oxide-phosphate films. Efficient transit interactions of Co3O4 with the semiconductor due to fast chemical binding of indium has led to the suppression of its diffusion inside the films. Secondary interactions of the oxides result in the formation of phosphate scaffold in the inner film regions, whereas the surface layer contains cobalt and indium oxides.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394018, Russia

    E. V. Tomina, I. Ya. Mittova, A. A. Samsonov, B. V. Sladkopevtsev, L. S. Zelenina & V. A. Baranova

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  1. E. V. Tomina
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  2. I. Ya. Mittova
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  3. A. A. Samsonov
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  4. B. V. Sladkopevtsev
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  5. L. S. Zelenina
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  6. V. A. Baranova
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Correspondence to E. V. Tomina.

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Original Russian Text © E.V. Tomina, I.Ya. Mittova, A.A. Samsonov, B.V. Sladkopevtsev, L.S. Zelenina, V.A. Baranova, 2017, published in Zhurnal Obshchei Khimii, 2017, Vol. 87, No. 1, pp. 11–16.

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Tomina, E.V., Mittova, I.Y., Samsonov, A.A. et al. Formation of nanosized oxide films via thermal oxidation of Co3O4/InP heterostructures. Russ J Gen Chem 87, 8–12 (2017). https://doi.org/10.1134/S1070363217010029

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  • DOI: https://doi.org/10.1134/S1070363217010029

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