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Crystallization of amorphous hydrogenated silicon (a-Si:H) films under irradiation with femtosecond laser pulses

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Abstract

Crystallization of thin films of amorphous hydrogenated silicon under the irradiation of femtosecond laser pulses has been studied. It was found that the crystallization has a clearly pronounced threshold nature and depends on the laser emission wavelength. As shown the best results are achieved in crystallization at the laser wavelength range of 740–760 nm.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. P. Belik, O. S. Vasyutinskii, A. V. Kukin, M. A. Petrov, R. S. Popov & E. I. Terukov

  2. Peter the Great St. Petersburg Polytechnic University, St. Petersburg, 195251, Russia

    M. A. Petrov & R. S. Popov

  3. R&D Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute, St. Petersburg, 194064, Russia

    E. I. Terukov

Authors
  1. V. P. Belik
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  2. O. S. Vasyutinskii
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  3. A. V. Kukin
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  4. M. A. Petrov
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  5. R. S. Popov
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  6. E. I. Terukov
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Corresponding author

Correspondence to V. P. Belik.

Additional information

Original Russian Text © V.P. Belik, O.S. Vasyutinskii, A.V. Kukin, M.A. Petrov, R.S. Popov, E.I. Terukov, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 15, pp. 36–42.

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Belik, V.P., Vasyutinskii, O.S., Kukin, A.V. et al. Crystallization of amorphous hydrogenated silicon (a-Si:H) films under irradiation with femtosecond laser pulses. Tech. Phys. Lett. 42, 788–791 (2016). https://doi.org/10.1134/S1063785016080058

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  • DOI: https://doi.org/10.1134/S1063785016080058

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