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Structuring effect of heteroepitaxial CdHgTe/CdZnTe systems under irradiation with silver ions

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Abstract

The characteristics of a damaged layer of p-Cd x Hg1 − x Te/CdZnTe (x ∼ 0.223) heterostructures after implantation by 100-keV silver ions with the implantation dose Q = 3.0 × 1013 cm−2 have been obtained using X-ray diffraction, atomic force microscopy, and electron microscopy. It has been found that, as a result of the ion implantation and subsequent annealing (75°C), a uniform array of nanostructures is formed on the surface of Hg(Cd)Te/Zn(Cd)Te samples. The X-ray diffraction patterns of the structurized Hg(Cd)Te/Zn(Cd)Te sample indicate the formation of polycrystalline Hg(Cd)Te phases of cubic structure with a composition x ∼ 0.20 and also oxide Ag2O in the subsurface (<100 nm) region of the host material. The observed effects of transformation of the defect-impurity system and structuring of the surface of the heteroepitaxial film of the low-energy-gap semiconductor have been explained using a deformation model.

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Authors and Affiliations

  1. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kyiv, 03028, Ukraine

    F. F. Sizov, R. K. Savkina, A. B. Smirnov, R. S. Udovytska, V. P. Kladko, A. I. Gudymenko, N. V. Safryuk & O. S. Lytvyn

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  1. F. F. Sizov
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  2. R. K. Savkina
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  3. A. B. Smirnov
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  4. R. S. Udovytska
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  5. V. P. Kladko
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  6. A. I. Gudymenko
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  7. N. V. Safryuk
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  8. O. S. Lytvyn
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Correspondence to F. F. Sizov.

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Original Russian Text © F.F. Sizov, R.K. Savkina, A.B. Smirnov, R.S. Udovytska, V.P. Kladko, A.I. Gudymenko, N.V. Safryuk, O.S. Lytvyn, 2014, published in Fizika Tverdogo Tela, 2014, Vol. 56, No. 11, pp. 2091–2096.

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Sizov, F.F., Savkina, R.K., Smirnov, A.B. et al. Structuring effect of heteroepitaxial CdHgTe/CdZnTe systems under irradiation with silver ions. Phys. Solid State 56, 2160–2165 (2014). https://doi.org/10.1134/S1063783414110286

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  • DOI: https://doi.org/10.1134/S1063783414110286

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