Abstract
Results of the investigation into the interface formation during the deposition of the films based on aziridinylphenylpyrrolofullerene (APP-C60) up to 8 nm thick on the surface of the oxidized silicon substrate are presented. The procedure of detecting reflection of testing low-energy electron beam from the surface implemented in the total current spectroscopy mode with a change in the incident electron energy from 0 to 25 eV is used. The structure of maxima in the total current spectra induced by the APP-C60 deposited film is established, and the character of interrelation of these maxima with π* and σ* energy bands in the studied materials is determined. It is revealed due to analyzing the variation in intensities of the total current spectra of the deposited APP-C60 film and the (SiO2)n-Si substrate that the APP-C60 film is formed at the early deposition stage with the coating thickness thinner than one monolayer without the formation of the intermediate modified organic layer. As the APP-C60/(SiO2)n-Si interface is formed, the work function of the surface increases by 0.7 eV, which corresponds to the transfer of the electron density from substrate (SiO2)n-Si toward the film APP-C60. The optical absorption spectra of the APP-C60 films are measured and compared with the spectra of films of unsubstituted C60.
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Original Russian Text © A.S. Komolov, E.F. Lazneva, N.B. Gerasimova, A.A. Gavrikov, A.E. Khlopov, S.N. Akhremchik, M.V. Zimina, Yu.A. Panina, A.V. Povolotskii, A.S. Konev, A.F. Khlebnikov, 2014, published in Fizika Tverdogo Tela, 2014, Vol. 56, No. 8, pp. 1608–1612.
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Komolov, A.S., Lazneva, E.F., Gerasimova, N.B. et al. Electronic properties of ultrathin films based on pyrrolofullerene molecules on the surface of oxidized silicon. Phys. Solid State 56, 1659–1663 (2014). https://doi.org/10.1134/S1063783414080125
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DOI: https://doi.org/10.1134/S1063783414080125