Abstract
The defect structure of dislocation-free silicon single crystals has been calculated using the approximate solution of the Fokker-Planck partial differential equations. It has been demonstrated that the precipitation starts to occur near the crystallization front due to the disappearance of excess intrinsic point defects on sinks whose role is played by oxygen and carbon impurities.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V. I. Talanin, Simulation of the Defect Structure of Dislocation-Free Silicon Single Crystals and Their Properties (ZIGMU, Zaporozh’e, Ukraine, 2007) [in Russian].
V. I. Talanin and I. E. Talanin, in New Research on Semiconductors, Ed. by T. B. Elliot (Nova Science, New York, United States, 2006), p. 31.
M. Itsumi, J. Cryst. Growth 237–239, 1773 (2002).
V. V. Voronkov, J. Cryst. Growth 59, 625 (1982).
T. Sinno and R. A. Brown. J. Electrochem. Soc. 146, 2300 (1999).
M. S. Kulkarni, V. V. Voronkov, and R. Falster, J. Electrochem. Soc. 151, G663 (2004).
A. I. Prostomolotov and N. A. Verezub, Solid State Phenom. 131-133, 283 (2008).
M. S. Kulkarni, J. Cryst. Growth 303, 438 (2007).
M. S. Kulkarni, J. Cryst. Growth 310, 324 (2008).
M. Akatsuka, M. Okui, S. Umeno, and K. Sueoka, J. Electrochem. Soc. 150, G587 (2003).
V. I. Talanin and I. E. Talanin, Fiz. Tverd. Tela (St. Petersburg) 49(3), 450 (2007) [Phys. Solid State 49 (3), 467 (2007)].
V. I. Talanin, I. E. Talanin, and V. V. Voronin, Can. J. Phys. 85, 1459 (2007).
V. I. Talanin, Izv. Vyssh. Uchebn. Zaved., Mater. Élektron. Tekh., No. 4, 27 (2007).
S. Senkader, J. Esfandyari, and G. Hobler, J. Appl. Phys. 78, 6469 (1995).
M. M. Belova, M. N. Moskal’kov, A. E. Rudich, S. I. Olikhovskiĭ, and E. V. Kochelab, Metallofiz. Noveĭshie Tekhnol. 29, 427 (2007).
V. V. Voronkov and R. Falster, J. Appl. Phys. 86, 2100 (1999).
J. Vanhellmont, J. Appl. Phys. 78, 4297 (1995).
J. Vanhellmont and C. Claeys, J. Appl. Phys. 62, 3960 (1987).
V. V. Voronkov and R. Falster, J. Appl. Phys. 91, 5802 (2002).
T. Ueki, M. Itsumi, and T. Takeda, Jpn. J. Appl. Phys. 38, 5695 (1999).
M. Itsumi, M. Maeda, S. Ohfuji, and T. Ueki, Jpn. J. Appl. Phys. 38, 5720 (1999).
H. Yamanaka, Jpn. J. Appl. Phys. 33, 3319 (1994).
Y. Yanase, H. Nishihata, T. Ochiai, and H. Tsuya, Jpn. J. Appl. Phys. 37, 1 (1998).
T. Ueki, M. Itsumi, T. Takeda, K. Yoshida, A. Takaoka, and S. Nakajima, Jpn. J. Appl. Phys. 37, L771 (1998).
M. Albrecht, S. B. Aldabergenova, Sh. B. Baiganatova, G. Frank, T. I. Taurbaev, S. Christiansen, and H. P. Strunk, Cryst. Res. Technol. 35, 899 (2000).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.I. Talanin, I.E. Talanin, 2010, published in Fizika Tverdogo Tela, 2010, Vol. 52, No. 10, pp. 1925–1931.
Rights and permissions
About this article
Cite this article
Talanin, V.I., Talanin, I.E. Kinetics of high-temperature precipitation in dislocation-free silicon single crystals. Phys. Solid State 52, 2063–2069 (2010). https://doi.org/10.1134/S1063783410100094
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783410100094