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Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser

  • XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
  • Published:
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Abstract

A semiconductor laser with a new waveguide is developed. It allows significant narrowing of the directional pattern (to 4° in the plane perpendicular to the p–n junction). In the used waveguide, the minimum excess of the effective refractive index n eff of the excitation mode over the substrate refractive index n s (n eff–n s ≪ 1) is provided by selecting the thickness of Al0.3Ga0.7As confinement layers, which significantly increases the waveguide mode size and leads to directional-pattern narrowing.

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References

  1. A. Pietrzak, P. Crump, H. Wenzel, G. Erbert, F. Bugge, and G. Tränkle, IEEE J. Sel. Top. Quantum Electron. 17, 1715 (2011).

    Article  Google Scholar 

  2. S. O. Slipchenko, A. A. Podoskin, D. A. Vinokurov, A.D. Bondarev, V. A. Kapitonov, N. A. Pikhtin, P. S. Kop’ev, and I. S. Tarasov, Semiconductors 47, 1079 (2013).

    Article  ADS  Google Scholar 

  3. V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, M. V. Karzanova, K. E. Kudryavtsev, S. M. Nekorkin, and A. N. Yablonskii, Quantum Electron. 43, 401 (2013).

    Article  ADS  Google Scholar 

  4. I. A. Avrutskii, E. M. Dianov, B. N. Zvonkov, N. B. Zvonkov, I. G. Malkina, G. A. Maksimov, and E. A. Uskova, Quantum Electron. 27, 118 (1997).

    Article  ADS  Google Scholar 

  5. I. V. Samartsev, V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, D. A. Kolpakov, and S. M. Nekorkin, Semiconductors 49, 1571 (2015).

    Article  ADS  Google Scholar 

  6. D. R. Scrifers, W. Streifer, and R. D. Burnham, Appl. Phys. Lett. 29, 23 (1976).

    Article  ADS  Google Scholar 

  7. V. Ya. Aleshkin, T. S. Babushkina, A. A. Biryukov, A. A. Dubinov, B. N. Zvonkov, M. N. Kolesnikov, and S. M. Nekorkin, Quantum Electron. 40, 855 (2010).

    Article  ADS  Google Scholar 

  8. B. S. Ryvkin and E. A, Avrutin, J. Appl. Phys. 98, 026107 (2005).

    Article  ADS  Google Scholar 

  9. V. A. Gelovani, A. P. Skorokhodov, and V. I. Shveikin, High-Efficiency High-Power Diode Lasers of New Type (URSS, KomKniga, Moscow, 2005) [in Russian].

    Google Scholar 

  10. S. M. Nekorkin, B. N. Zvonkov, M. V. Karzanova, N. V. Dikareva, V. Ya. Aleshkin, and A. A. Dubinov, Quantum Electron. 42, 931 (2012).

    Article  Google Scholar 

  11. H. C. Casey and M. B, Panish, Heterostructure Lasers (Academic Press, New York, San Francisco, London, 1978).

    Google Scholar 

  12. A. P. Bogatov, A. E. Drakin, A. A. Lyakh, and A. A. Stratonikov, Quantum Electron. 31, 847 (2001).

    Article  ADS  Google Scholar 

  13. N. V. Dikareva, S. M. Nekorkin, B. N. Zvonkov, V. Ya. Aleshkin, and A. A. Dubinov, Quantum Electron. 45, 204 (2015).

    Article  ADS  Google Scholar 

  14. A. E. Zhukov, Lasers Based on Semiconductor Structures (Elmor, and St. Petersburg, 2007) [in Russian].

    Google Scholar 

Download references

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Authors and Affiliations

  1. Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, pr. Gagarina 23/3, Nizhny Novgorod, 603950, Russia

    N. V. Baydus, S. M. Nekorkin, D. A. Kolpakov & A. V. Ershov

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Ul’yanova 46, Nizhny Novgorod, 603950, Russia

    V. Ya. Aleshkin & A. A. Dubinov

  3. Lobachevsky State University of Nizhny Novgorod, pr. Gagarina 23, Nizhny Novgorod, 603950, Russia

    N. V. Baydus, D. A. Kolpakov, A. V. Ershov, V. Ya. Aleshkin & A. A. Dubinov

  4. Belarusian State University, pr. Nezavisimosti 4, Minsk, 220030, Republic of Belarus

    A. A. Afonenko

Authors
  1. N. V. Baydus
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  2. S. M. Nekorkin
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  3. D. A. Kolpakov
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  4. A. V. Ershov
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  5. V. Ya. Aleshkin
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  6. A. A. Dubinov
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  7. A. A. Afonenko
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Corresponding author

Correspondence to D. A. Kolpakov.

Additional information

Original Russian Text © N.V. Baydus, S.M. Nekorkin, D.A. Kolpakov, A.V. Ershov, V.Ya. Aleshkin, A.A. Dubinov, A.A. Afonenko, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 11, pp. 1509–1512.

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Baydus, N.V., Nekorkin, S.M., Kolpakov, D.A. et al. Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser. Semiconductors 50, 1488–1492 (2016). https://doi.org/10.1134/S1063782616110038

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  • DOI: https://doi.org/10.1134/S1063782616110038

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