Abstract
GaInP1 − x Sb x layers containing different Sb fractions are produced by metal-organic vaporphase epitaxy on GaAs and Ge substrates. The charge-carrier mobilities in the GaInP1 − x Sb x layers are measured at room temperature and 77 K. The room-temperature charge-carrier mobilities in the GaInP1 − x Sb x layers additionally doped with donor and acceptor impurities are measured. The photoluminescence peaks of GaInP1 − x Sb x are detected. The influence of the Sb impurity on the band gap and charge-carrier mobility in GaInP is determined.
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References
J. M. Olson and D. J. Friedman, Nat. Ren. Energy 64, 359 (2003).
C. M. Fetzer and J. H. Ermer, US Patent No. 2007/0068572 A1 (2007).
M. C. de Long, Appl. Phys. Lett. 66, 3185 (1995).
Yu. A. Goldberg, Handbook Series on Semiconductor Parameters (World Scientific, London, 1999) vol. 2, p. 37.
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Original Russian Text © A.F. Skachkov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 5, pp. 593–595.
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Skachkov, A.F. GaInP semiconductor compounds doped with the Sb isovalent impurity. Semiconductors 49, 579–581 (2015). https://doi.org/10.1134/S1063782615050231
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DOI: https://doi.org/10.1134/S1063782615050231