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Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping

  • Surfaces, Interfaces, and Thin Films
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Abstract

The paper presents basic approaches in designing and growing by molecular beam epitaxy of (Zn,Mg)(S,Se)-based laser heterostructures with multiple CdSe quantum dot (QD) sheets or ZnCdSe quantum wells (QW). The method of calculation of compensating short-period ZnSSe/ZnSe superlattices (SLs) in both active and waveguide regions of laser heterostructures possessing the different waveguide thickness and different number of active regions is presented. The method allowing reduction of the density of nonequilibrium point defects in the active region of the II–VI laser structures has been proposed. It utilizes the migration enhanced epitaxy mode in growing the ZnSe QW confining the CdSe QD sheet. The threshold power density as low as P thr ∼ 0.8 kW/cm2 at T = 300 K has been demonstrated for laser heterostructure with single CdSe QD sheet and asymmetric graded-index waveguide with strain-compensating SLs.

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    S. V. Sorokin, S. V. Gronin, I. V. Sedova, M. V. Rakhlin, M. V. Baidakova, P. S. Kop’ev, S. S. Ruvimov & S. V. Ivanov

  2. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk, 220072, Belarus

    A. G. Vainilovich, E. V. Lutsenko & G. P. Yablonskii

  3. Moscow State Technical University of Radio Engineering, Electronics, and Automation, pr. Vernadskogo 78, Moscow, 119454, Russia

    N. A. Gamov, E. V. Zhdanova & M. M. Zverev

  4. Department of Electrical Engineering, University of Notre Dame, IN, 46556, Notre Dame, USA

    S. S. Ruvimov

Authors
  1. S. V. Sorokin
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  2. S. V. Gronin
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  3. I. V. Sedova
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  4. M. V. Rakhlin
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  5. M. V. Baidakova
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  6. P. S. Kop’ev
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  7. A. G. Vainilovich
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  8. E. V. Lutsenko
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  9. G. P. Yablonskii
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  10. N. A. Gamov
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  11. E. V. Zhdanova
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  12. M. M. Zverev
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  13. S. S. Ruvimov
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  14. S. V. Ivanov
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Correspondence to S. V. Sorokin.

Additional information

Original Russian Text © S.V. Sorokin, S.V. Gronin, I.V. Sedova, M.V. Rakhlin, M.V. Baidakova, P.S. Kop’ev, A.G. Vainilovich, E.V. Lutsenko, G.P. Yablonskii, N.A. Gamov, E.V. Zhdanova, M.M. Zverev, S.S. Ruvimov, S.V. Ivanov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 3, pp. 342–348.

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Sorokin, S.V., Gronin, S.V., Sedova, I.V. et al. Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping. Semiconductors 49, 331–336 (2015). https://doi.org/10.1134/S1063782615030215

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