Abstract
The effect of lateral intraband photoconductivity in undoped InAs/GaAs heterostructures with quantum dots (QDs) has been studied, with QD levels populated with carriers by means of interband optical excitation of varied power at different wavelengths. In the absence of interband illumination, no photoconductivity is observed in the mid-IR spectral range. At the same time, additional exposure of the structures to visible or near-IR light gives rise to a strong photoconductivity signal in the mid-IR spectral range (3–5 μm), associated with intraband transitions in QDs. The signal is observed up to a temperature of ∼200 K. Use of interband optical pumping makes the intraband photoconductivity signal stronger, compared with similar structures in which doping serves to populate QD levels.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
P. Vines, C. H. Tan, J. P. R. David, R. S. Attaluri, T. E. Van der Velde, and S. Krishna, Proc. SPIE 7113, 71130J (2008).
L. Chu, A. Zrenner, G. Böhm, and G. Abstreiter, Appl. Phys. Lett. 76, 1944 (2000).
D. Pal and E. Towe, J. Vac. Sci. Technol. 23, 1132 (2005).
L. Fu, Q. Li, P. Kuffner, G. Jolley, P. Gareso, H. H. Tan, and C. Jagadish, Appl. Phys. Lett. 93, 013504 (2008).
M. Olszakier, E. Ehrenfreund, E. Cohen, J. Bajaj, and G. J. Sullivan, Phys. Rev. Lett. 6, 2997 (1989).
D. Delacourt, D. Papillon, J. P. Pocholle, J. P. Schnell, and M. Papuchon, Electron. Lett. 26, 277 (1990).
V. Berger, E. Rosencher, N. Vodjdani, and E. Costard, Appl. Phys. Lett. 62, 378 (1993).
S. Sauvage, P. Boucaud, F. H. Julien, J.-M. Gerard, and J.-Y. Marzin, J. Appl. Phys. 82, 3396 (1997).
S. Sauvage, P. Boucaud, J.-M. Gerard, and V. Thierry-Mieg, J. Appl. Phys. 84, 4356 (1998).
P. Martyniuk and A. Rogalski, Bull. Polish Acad. Sci. Tech. Sci. 57, 103 (2009).
L. D. Moldavskaya, N. V. Vostokov, D. M. Gaponova, V. M. Danil’tsev, M. N. Drozdov, Yu. N. Drozdov, and V. I. Shashkin, Semiconductors 42, 99 (2008).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.V. Antonov, V.M. Daniltsev, M.N. Drozdov, Yu.N. Drozdov, L.D. Moldavskaya, V.I. Shashkin, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 11, pp. 1444–1447.
Rights and permissions
About this article
Cite this article
Antonov, A.V., Daniltsev, V.M., Drozdov, M.N. et al. Intraband photoconductivity induced by interband illumination in InAs/GaAs heterostructures with quantum dots. Semiconductors 46, 1415–1417 (2012). https://doi.org/10.1134/S1063782612110048
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782612110048