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Determination of the degree of ordering of materials’ structure by calculating the information-correlation characteristics

  • Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
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Abstract

A new method for the analysis of self-organization processes in solid-state materials by calculating the information-correlation characteristics of a surface (in particular, by calculating the average mutual information) is described. Criteria for determining the degree of ordering of a surface structure are suggested; these criteria have been tested for experimental semiconductor structures of single-, poly-crystalline, and amorphous silicon. The dependences of the information characteristics for films of disordered semiconductors on the technological conditions of their fabrication are established.

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Authors and Affiliations

  1. Ryazan State Radioengineering University, Ryazan, 390005, Russia

    S. P. Vikhrov, T. G. Avacheva, N. V. Bodyagin, N. V. Grishankina & A. P. Avachev

Authors
  1. S. P. Vikhrov
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  2. T. G. Avacheva
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  3. N. V. Bodyagin
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  4. N. V. Grishankina
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  5. A. P. Avachev
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Corresponding author

Correspondence to S. P. Vikhrov.

Additional information

Original Russian Text © S.P. Vikhrov, T.G. Avacheva, N.V. Bodyagin, N.V. Grishankina, A.P. Avachev, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 4, pp. 433–438.

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Vikhrov, S.P., Avacheva, T.G., Bodyagin, N.V. et al. Determination of the degree of ordering of materials’ structure by calculating the information-correlation characteristics. Semiconductors 46, 415–421 (2012). https://doi.org/10.1134/S1063782612040240

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  • DOI: https://doi.org/10.1134/S1063782612040240

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