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Negative differential conductance in InAs wire based double quantum dot induced by a charged AFM tip

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Abstract

We investigate the conductance of an InAs nanowire in the nonlinear regime in the case of low electron density where the wire is split into quantum dots connected in series. The negative differential conductance in the wire is initiated by means of a charged atomic force microscope tip adjusting the transparency of the tunneling barrier between two adjoining quantum dots. We confirm that the negative differential conductance arises due to the resonant tunneling between these two adjoining quantum dots. The influence of the transparency of the blocking barriers and the relative position of energy states in the adjoining dots on a decrease of the negative differential conductance is investigated in detail.

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Authors and Affiliations

  1. Institute of Solid State Physics, Russian Academy of Science, Chernogolovka, Moscow oblast, 142432, Russia

    A. A. Zhukov

  2. Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich, 52425, Jülich, Germany

    Ch. Volk, A. Winden, H. Hardtdegen & Th. Schäpers

  3. Forschungszentrum Jülich, JARA-Fundamentals of Future Information Technology, Jülich, 52425, Germany

    Ch. Volk, A. Winden, H. Hardtdegen & Th. Schäpers

  4. II. Physikalisches Institut, RWTH Aachen University, Aachen, 52056, Germany

    Th. Schäpers

Authors
  1. A. A. Zhukov
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  2. Ch. Volk
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  3. A. Winden
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  4. H. Hardtdegen
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  5. Th. Schäpers
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Correspondence to A. A. Zhukov.

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Zhukov, A.A., Volk, C., Winden, A. et al. Negative differential conductance in InAs wire based double quantum dot induced by a charged AFM tip. J. Exp. Theor. Phys. 115, 1062–1067 (2012). https://doi.org/10.1134/S1063776112110131

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  • DOI: https://doi.org/10.1134/S1063776112110131

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