Abstract
The initial stages of the growth of GaAs epitaxial layers by metalorganic vapor phase epitaxy have been studied by atomic force microscopy. The results demonstrate that the growth mechanism depends on the pressure in the deposition chamber (atmospheric or reduced to 104 Pa), which can be understood in terms of changes in the adsorption–desorption processes on the growth surface with the participation of hydrogen.
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References
III–V Semiconductor Devices, Malik, R.J., Ed., Amsterdam: Elsevier, 2012.
Razeghi, M., The MOCVD Challenge: A Survey of GaIn-AsP–InP and GaInAsP–GaAs for Photonic and Electronic Device Applications, Boca Raton: CRC Press, 2010.
Coleman, J.J., Metalorganic chemical vapor deposition for optoelectronic devices, Proc. IEEE, 1997, vol. 85, no. 11, pp. 1715–1720.
Spence, J.C.H., The future of atomic resolution electron microscopy for materials science, Mater. Sci. Eng., 1999, vol. 26, nos. 1–2, pp. 1–49.
Reimer, L., Scanning Electron Microscopy: Physics of Image Formation and Micro-Analysis, Berlin: Springer, 2000.
Boldyrevskii, P.B., Kudryavtseva, R.V., Ovsetsina, A.E., Ivanov, V.A., and Parshkov, V.G., Initial stages of the growth of homoepitaxial GaAs layers in the Ga(CH3)3–AsH3–H2 system, Izv. Akad. Nauk SSSR, Neorg. Mater., 1984, vol. 20, no. 8, pp. 1418–1420.
Binnig, G. and Rohrer, H., In touch with atoms, Rev. Mod. Phys., 1999, vol. 71, pp. 324–330.
Markov, I.V., Crystal Growth for Beginners: Fundamentals of Nucleation, Crystal Growth, and Epitaxy, Singapore: World Scientific, 2004.
Properties of Gallium Arsenide, London: INSPEC, 1990.
Shinohara, M., Tanimoto, M., Yokoyama, H., and Inoue, N., Behavior and mechanism of wide terrace formation during metalorganic vapor phase epitaxy of GaAs and related materials, J. Cryst. Growth, 1994, vol. 145, nos. 1–4, pp. 113–119.
Bukharaev, A.A., Berdunov, N.V., Ovchinnikov, D.V., and Salikhov, K.M., Surface analysis by scanning force microscopy, Mikroelektronika, 1997, vol. 26, no. 3, pp. 163–167.
Ikuta, K., Osaka, J., and Yokoyama, H., Morphology on GaAs surfaces grown by metalorganic chemical vapor deposition and molecular beam epitaxy, J. Cryst. Growth, 1994, vol. 136, nos. 1–4, pp. 114–117.
Lelarge, F., Wang, Z.Z., Cavanna, A., Laruelle, F., and Etienne, B., The building up of terrace periodicity by MBE growth on (001) GaAs vicinal surfaces, J. Cryst. Growth, 1997, vols. 175–176, no. 2, pp. 1102–1107.
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Original Russian Text © P.B. Boldyrevskii, D.O. Filatov, I.A. Kazantseva, D.S. Smotrin, M.V. Revin, 2016, published in Neorganicheskie Materialy, 2016, Vol. 52, No. 10, pp. 1054–1059.
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Boldyrevskii, P.B., Filatov, D.O., Kazantseva, I.A. et al. Initial stages of gallium arsenide metalorganic vapor phase epitaxy. Inorg Mater 52, 985–989 (2016). https://doi.org/10.1134/S0020168516100046
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DOI: https://doi.org/10.1134/S0020168516100046