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Metal solvent droplet stability in silicon whisker growth

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Abstract

We have studied conditions that determine a stable state of the metal solvent droplet in whisker growth through chemical vapor deposition. The results demonstrate that the contact angle of an equilibrium droplet depends on the supersaturation of the vapor phase with the crystallizing substance. Limitations on the contact angle of a stable metal solvent droplet on the tip of Si, SiC, and GaP whiskers have been identified.

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Authors and Affiliations

  1. Voronezh State Technical University, Moskovskii pr. 14, Voronezh, 394026, Russia

    V. A. Nebol’sin, E. V. Zotova & S. S. Shmakova

  2. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Vorob’evy gory 1, Moscow, 119992, Russia

    D. B. Suyatin

Authors
  1. V. A. Nebol’sin
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  2. D. B. Suyatin
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  3. E. V. Zotova
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  4. S. S. Shmakova
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Corresponding author

Correspondence to V. A. Nebol’sin.

Additional information

Original Russian Text © V.A. Nebol’sin, D.B. Suyatin, E.V. Zotova, S.S. Shmakova, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 9, pp. 979–984.

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Nebol’sin, V.A., Suyatin, D.B., Zotova, E.V. et al. Metal solvent droplet stability in silicon whisker growth. Inorg Mater 48, 861–866 (2012). https://doi.org/10.1134/S0020168512080110

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  • DOI: https://doi.org/10.1134/S0020168512080110

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