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Formation of integrated nanosized graphene structures by focused ion-beam etching

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Abstract

Ion-beam methods of nanostructure formation in multigraphene layers integrated with a system of current-carrying electrodes during microelectronic group processing have been developed. The results demonstrate the feasibility of both thinning the structures down to several graphene layers and forming quasione-dimensional strips on the basis of the structures.

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Authors and Affiliations

  1. Moscow Institute of Electronic Technology (Technical University), Moscow, 123398, Russia

    I. I. Bobrinetskii, K. V. Gorshkov, V. K. Nevolin & K. A. Tsarik

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  1. I. I. Bobrinetskii
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  2. K. V. Gorshkov
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  3. V. K. Nevolin
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  4. K. A. Tsarik
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Corresponding author

Correspondence to V. K. Nevolin.

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Original Russian Text © I.I. Bobrinetskii, K.V. Gorshkov, V.K. Nevolin, K.A. Tsarik, 2010, published in Rossiiskie nanotekhnologii, 2010, Vol. 5, Nos. 5–6.

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Bobrinetskii, I.I., Gorshkov, K.V., Nevolin, V.K. et al. Formation of integrated nanosized graphene structures by focused ion-beam etching. Nanotechnol Russia 5, 313–319 (2010). https://doi.org/10.1134/S1995078010050058

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  • DOI: https://doi.org/10.1134/S1995078010050058

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