Abstract
A technology for manufacturing a new micropixel avalanche photodiode (MAPD) with deeply buried pixels (including two epitaxial layers between which an array of n +) regions is formed by ionic doping) is described. A new method for manufacturing the compact MAPD matrices with minimum dead zone is proposed.
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Original Russian Text © Z. Sadygov, A. Ariffin, F. Akhmedov, N. Anfimov, T. Bokova, A. Dovlatov, I. Zheleznykh, F. Zerrouk, R. Mekhtieva, A. Ol’shevskii, A. Sadygov, A. Titov, V. Chalyshev, M. Troitskaya, 2014, published in Pis’ma v Zhurnal Fizika Elementarnykh Chastits i Atomnogo Yadra, 2014, No. 1(185), pp. 105–110.
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Sadygov, Z., Ariffin, A., Akhmedov, F. et al. Technology of manufacturing micropixel avalanche photodiodes and a compact matrix on their basis. Phys. Part. Nuclei Lett. 10, 780–782 (2013). https://doi.org/10.1134/S154747711401018X
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DOI: https://doi.org/10.1134/S154747711401018X