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Investigation into the photosensitivity of a composite from lead selenide and selenite in UV region of spectrum

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Abstract

Technological aspects of the formation of photoresistive structures for an ultraviolet region of the optical spectrum based on a composite from lead selenide and selenite are considered. Using a chosen set of light-emitting diodes, the photoelectric sensitivity of the samples in a spectral region of 315–780 nm has been studied. The photoresistive structures are shown to possess maximal sensitivity in a ultraviolet region of wave-lengths of 315–430 nm.

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Authors and Affiliations

  1. St. Petersburg State University, Universitetskii pr. 26, Petrodvorets, St. Petersburg, 198504, Russia

    V. V. Tomaev

  2. National Mineral-Row University Mining, Vasil’yevskii Ostrov, 21st line 2, St. Petersburg, 199106, Russia

    S. V. Egorov & T. V. Stoyanova

Authors
  1. V. V. Tomaev
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  2. S. V. Egorov
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  3. T. V. Stoyanova
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Correspondence to V. V. Tomaev.

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Original Russian Text © V.V. Tomaev, S.V. Egorov, T.V. Stoyanova, 2014, published in Fizika i Khimiya Stekla.

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Tomaev, V.V., Egorov, S.V. & Stoyanova, T.V. Investigation into the photosensitivity of a composite from lead selenide and selenite in UV region of spectrum. Glass Phys Chem 40, 208–214 (2014). https://doi.org/10.1134/S1087659614020229

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  • DOI: https://doi.org/10.1134/S1087659614020229

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