Abstract
We have studied electroluminescence in n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures with isotype heterojunctions, in which the quantum efficiency of emission is increased due to the additional production of electron-hole pairs as a result of the impact ionization that takes place near the heterointerface. The impact ionization in such heterostructures is possible due to the presence of deep wells in the energy band structure.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
N. D. Stoyanov, B. E. Zhurtanov, A. P. Astakhova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 996 (2003) [Semiconductors 37, 971 (2003)].
A. P. Astakhova, B. E. Zhurtanov, A. N. Imenkov, et al., Pis’ma Zh. Tekh. Fiz. 33, 23 (2007) [Tech. Phys. Lett. 33, 11 (2007)].
N. D. Stoyanov, B. E. Zhurtanov, A. N. Imenkov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 41, 878 (2007) [Semiconductors 41, 855 (2007)].
M. P. Mikhaĭlova, M. Z. Zhingarev, and V. I. Korol’kov, Pis’ma Zh. Tekh. Fiz. 6, 376 (1980) [Sov. Tech. Phys. Lett. 6, 162 (1980)].
G. G. Zegrya and V. A. Kharchenko, Zh. Éksp. Teor. Fiz. 101, 327 (1992) [Sov. Phys. JETP 74, 173 (1992)].
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © N.L. Bazhenov, B.E. Zhurtanov, K.D. Mynbaev, A.P. Astakhova, A.N. Imenkov, M.P. Mikhaĭlova, V.A. Smirnov, N.D. Stoyanov, Yu.P. Yakovlev, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 23, pp. 1–6.
Rights and permissions
About this article
Cite this article
Bazhenov, N.L., Zhurtanov, B.E., Mynbaev, K.D. et al. Impact-ionization-stimulated electroluminescence in isotype n-GaSb/n-AlGaAsSb/n-GaInAsSb heterostructures. Tech. Phys. Lett. 33, 987–989 (2007). https://doi.org/10.1134/S1063785007120012
Received:
Issue Date:
DOI: https://doi.org/10.1134/S1063785007120012