Abstract
The dislocation networks in structures with hydrophilically bonded Si (001) wafers are investigated by transmission electron microscopy. Networks with differing geometry and type of dominant dislocations are observed. One type of networks, which is typical of bonded structures, is formed on the basis of a square network of screw dislocations and contains a system of unidirectional 60° zigzag-shaped dislocations. It is established that such dislocation networks are flat in structures with an azimuthal misorientation of wafers exceeding 2°, whereas they are three-dimensional at smaller misorientation angles. A unique network of another type is formed only by 60° dislocations, the majority of which are extended along one direction, which does not coincide with the 〈110〉 directions in the boundary plane and has a number of specific features, the explanation of which is impossible within the framework of conventional representations.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. Reiche, Mater. Sci. Forum 590, 57 (2008).
T. Sekiguchi, S. Ito, and A. Kanai, Mater. Sci. Eng. B 91–92, 244 (2002).
A. Bondarenko, O. Vyvenko, and I. Isakov, J. Phys. Conf. Ser. 281, 012008 (2011).
H. Föll and D. Ast, Philos. Mag. A 40, 589 (1979).
T. Akatsu, R. Scholz, and U. Gösele, J. Mater. Sci. 39, 3031 (2004).
K. Rousseau, J. Eymery, F. Fournel, J.-P. Morniroli, and J.-L. Rouvière, Philos. Mag. 85, 2415 (2005).
M. Benamara, A. Rocher, A. Laporte, G. Sarrabayrouse, L. Lescouzères, A. PeyreLavigne, M. Fnaiech, and A. Claverie, Mater. Res. Soc. Symp. Proc. 378, 863 (1995).
J. Coelho, G. Patriarche, F. Glas, I. Sagnes, and G. Saint-Girons, Phys. Status Solidi C 2, 1933 (2005).
V. Vdovin, O. Vyvenko, E. Ubyivovk, and O. Kononchuk, Solid State Phenom. 178–179, 253 (2011).
V. I. Vdovin, L. A. Matveeva, G. N. Semenova, M. Ya. Skorohod, Yu. A. Tkhorik, and L. S. Khazan, Phys. Status. Solidi A 92, 379 (1985).
U. Gösele, Y. Bluhm, G. Köstner, P. Kopperschmidt, G. Kräster, R. Scholz, A. Schumacher, St. Senz, and Q.-Y. Tong, J. Vac. Sci. Technol. A 17, 1145 (1999).
T. Wilhelm, T. Mchedlidze, X. Yu, T. Arguirov, M. Kittler, and M. Reiche, Solid State Phenom. 131–133, 571 (2008).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.I. Vdovin, E.V. Ubyivovk, O.F. Vyvenko, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 2, pp. 228–232.
Rights and permissions
About this article
Cite this article
Vdovin, V.I., Ubyivovk, E.V. & Vyvenko, O.F. Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers. Semiconductors 47, 264–268 (2013). https://doi.org/10.1134/S106378261302022X
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S106378261302022X