Abstract
The conditions of heat and mass transfer in a growth container in horizontally oriented crystallization of refractory oxides are studied by means of physical modeling. It is found that increasing the thickness of the fluid layer has no significant impact on the character and intensity of mass transfer in the near-surface and near-bottom areas, but it contributes to an increase in the width of the central zone, in which the convective mass transfer is substantially limited.
Similar content being viewed by others
References
A. G. Kirdyashkin and A. A. Kirdyashkin, “Emergence of Turbulent Free Convection in a Horizontal Layer and the Mode of Convection in the Lower Mantle,” Dokl. Akad. Nauk 362(3), 404–406 (1998).
A. G. Kirdyashkin, “Thermogravitational and Thermocapillary Flows in a Horizontal Temperature Gradient,” J. Heat Mass Transfer 27(8), 1205–1218 (1984).
G. Schlichting, Boundary Layer Theory (Springer-Verlag, Berlin-Heidelberg, 2000).
M. A. Maurakh and B. S. Mitin, Refractory Liquid Oxides (Metallurgiya, Moscow, 1979) [in Russian].
V. V. Gurov and A. G. Kirdyashkin, “Sectorial Structure of Chrysoberyl Crystals Grown by Horizontally Oriented Crystallization,” Neorg. Mater. 37(1), 52–55 (2001).
V. V. Gurov, E. G. Tsvetkov, and A. G. Kirdyashkin, “Features of Beryllium Aluminate Crystal Growth by the Method of Horizontally Oriented Crystallization,” J. Cryst. Growth 256, 361–367 (2003).
V. V. Gurov and E. G. Tsvetkov, “Specific Character of Melt Growth of Low-Temperature Phase of Aluminum Beryllate,” J. Cryst. Growth 310, 229–233 (2008).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.V. Gurov, A.G. Kirdyashkin.
__________
Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, Vol. 53, No. 1, pp. 98–104, January–February, 2012.
Rights and permissions
About this article
Cite this article
Gurov, V.V., Kirdyashkin, A.G. Physical modeling of heat and mass transfer in large crystal growth by high-temperature horizontal directional crystallization. J Appl Mech Tech Phy 53, 83–89 (2012). https://doi.org/10.1134/S0021894412010117
Received:
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0021894412010117