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Stability of the (0001) surface of the Bi2Se3 topological insulator

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Abstract

The inertness of the cleaved (0001) surface of a Bi2Se3 single crystal to oxidation has been demonstrated using X-ray photoelectron spectroscopy, as well as atomic-force and scanning tunneling microscopy and spectroscopy. No intrinsic bismuth and selenium oxides are formed on the surface after a month of storage in air. Atomically flat surfaces with macroscopic sizes (∼1 cm2) and rms roughness less than 0.1 nm have been prepared, and (1 × 1)-(0001) Bi2Se3 atomic structure has been resolved. The tunneling conductance measurements have shown that the energy dependence of the surface density of states is quasilinear in the band gap of Bi2Se3.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    O. E. Tereshchenko, V. V. Atuchin, K. N. Romanyuk, A. S. Kozhukhov & A. A. Shklyaev

  2. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia

    O. E. Tereshchenko, K. N. Romanyuk, S. V. Makarenko, V. A. Golyashov, A. S. Kozhukhov & A. A. Shklyaev

  3. Joint Institute of Geology, Geophysics, and Mineralogy, Siberian Branch, Russian Academy of Sciences, Universitetskii pr. 3, Novosibirsk, 630090, Russia

    K. A. Kokh

  4. Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 5, Novosibirsk, 630090, Russia

    I. P. Prosvirin

Authors
  1. O. E. Tereshchenko
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  2. K. A. Kokh
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  3. V. V. Atuchin
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  4. K. N. Romanyuk
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  5. S. V. Makarenko
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  6. V. A. Golyashov
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  7. A. S. Kozhukhov
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  8. I. P. Prosvirin
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  9. A. A. Shklyaev
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Correspondence to O. E. Tereshchenko.

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Original Russian Text © O.E. Tereshchenko, K.A. Kokh, V.V. Atuchin, K.N. Romanyuk, S.V. Makarenko, V.A. Golyashov, A.S. Kozhukhov, I.P. Prosvirin, A.A. Shklyaev, 2011, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2011, Vol. 94, No. 6, pp. 500–503.

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Tereshchenko, O.E., Kokh, K.A., Atuchin, V.V. et al. Stability of the (0001) surface of the Bi2Se3 topological insulator. Jetp Lett. 94, 465–468 (2011). https://doi.org/10.1134/S0021364011180159

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  • DOI: https://doi.org/10.1134/S0021364011180159

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