Abstract
The history of the development of semiconductor heterostructures and their applications in various electron devices is presented, along with a brief historical survey of the physics, production technology, and applications of quantum wells and superlattices. Advances in recent years in the fabrication of structures utilizing quantum wires and especially quantum dots are discussed. An outline of future trends and prospects for the development and application of these latest types of heterostructures is presented.
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References
V. P. Zhuze and B. V. Kurchatov, Zh. Éksp. Teor. Fiz. 2, 309 (1932); V. P. Zhuze and B. V. Kurchatov, Phys. Z. Sowjetunion 2, 463 (1932).
Ya. I. Frenkel and A. F. Ioffe, Phys. Z. Sowjetunion 1, 60 (1932).
Ya. I. Frenkel’, Phys. Rev. 37, 17 (1931); Phys. Rev. 37, 1276 (1931); Zh. Éksp. Teor. Fiz. 6, 647 (1936).
E. F. Gross and N. A. Kariev, Dokl. Akad. Nauk SSSR 84, 261 (1952); E. F. Gross and N. A. Kariev, Dokl. Akad. Nauk SSSR 84, 471 (1952).
B. I. Davydov, Zh. Éksp. Teor. Fiz. 9, 451 (1939).
N. H. Welker, Z. Naturforsch. 7 a, 744 (1952); Z. Naturforsch. 8 a, 248 (1953).
N. A. Goryunova, Author’s Abstract of Dissertation [in Russian] (LGU, FTI, 1951); A. I. Blyum, N. P. Mokrovskii, and A. R. Regel’, in Proceedings of the Seventh Conference on the Properties of Semiconductors [in Russian], Izv. Akad. Nauk Ser. Fiz. 16, 139 (1952).
W. Shockley, U.S. Patent 2,569,347 (September 25, 1951).
A. I. Gubanov, Zh. Tekh. Fiz. 20, 1287 (1950); Zh. Tekh. Fiz. 21, 304 (1951).
H. Kroemer, Proc. IRE 45, 1535 (1957); RCA Rev. 28, 332 (1957).
Zh. I. Alferov and R. F. Kazarinov, Inventor’s Certificate No. 181737 [in Russian], Application No. 950840, priority as of March 30, 1963; H. Kroemer, Proc. IEEE 51, 1782 (1963).
Zh. I. Alferov, V. B. Khalfin, and R. F. Kazarinov, Fiz. Tverd. Tela (Leningrad) 8, 3102 (1966) [Sov. Phys. Solid State 8, 2480 (1966)].
Zh. I. Alferov, Fiz. Tekh. Poluprovodn. 1, 436 (1967) [Sov. Phys. Semicond. 1, 358 (1967)].
L. Anderson, IBM J. Res. Dev. 4, 283 (1960); Solid-State Electron. 5, 341 (1962).
G. Natta and L. Passerini, Gazz. Chim. Ital. 58, 458 (1928); V. M. Goldschmidt, Trans. Faraday Soc. 25, 253 (1929).
Zh. I. Alferov, D. Z. Garbuzov, V. S. Grigor’eva, Yu. V. Zhilyaev, L. V. Kradinova, V. I. Korol’kov, E. P. Morozov, O. A. Ninua, E. L. Portnoi, V. D. Prochukhan, and M. K. Trukan, Fiz. Tverd. Tela (Leningrad) 9, 279 (1967) [Sov. Phys. Solid State 9, 208 (1967)].
Zh. I. Alferov, Yu. V. Zhilyaev, and Yu. V. Shmartsev, Fiz. Tekh. Poluprovodn. 5, 196 (1971) [Sov. Phys. Semicond. 5, 174 (1971)].
Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, D. N. Tret’yakov, and V. M. Tuchkevich, Fiz. Tekh. Poluprovodn. 1, 1579 (1967) [Sov. Phys. Semicond. 1, 1313 (1967)]; H. S. Rupprecht, J. M. Woodall, and G. D. Pettit, Appl. Phys. Lett. 11, 81 (1967).
Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, E. L. Portnoi, and D. N. Tret’yakov, Fiz. Tekh. Poluprovodn. 2, 1016 (1968) [Sov. Phys. Semicond. 2, 843 (1968)].
Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, E. L. Portnoi, and D. N. Tret’yakov, Fiz. Tekh. Poluprovodn. 2, 1545 (1968) [Sov. Phys. Semicond. 2, 1289 (1968)].
Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, E. L. Portnoi, and D. N. Tret’yakov, in Proceedings of the Ninth International Conference on Semiconductor Structures, Moscow, July 23–29, 1968, Vol. 1 [in Russian] (Nauka, Leningrad, 1969), p. 534; b) Zh. I. Alferov, in Proceedings of the International Conference on Luminescence, Newark, Delaware, August 25–29, 1969, J. Lumin. 1, 869 (1970); c) Zh. I. Alferov, D. Z. Garbuzov, E. P. Morozov, and E. L. Portnoi, Fiz. Tekh. Poluprovodn. 3, 1054 (1969) [Sov. Phys. Semicond. 3, 885 (1969)]; d) Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, E. L. Portnoi, and A. A. Yakovenko, Fiz. Tekh. Poluprovodn. 3, 541 (1969) [Sov. Phys. Semicond. 3, 460 (1969)].
Zh. I. Alferov, V. M. Andreev, E. L. Portnoi, and M. K. Trukan, Fiz. Tekh. Poluprovodn. 3, 1328 (1969) [Sov. Phys. Semicond. 3, 1107 (1969)].
Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, E. L. Portnoi, and A. A. Yakovenko, Fiz. Tekh. Poluprovodn. 930 (1966) [Sov. Phys. Semicond. 3, 785 (1966)].
Zh. I. Alferov, V. M. Andreev, M. V. Kagan, I. I. Protasov, and V. G. Trofim, Fiz. Tekh. Poluprovodn. 4, 2378 (1970) [Sov. Phys. Semicond. 4, 2047 (1970)].
Zh. I. Alferov, F. A. Akhmedov, V. I. Korol’kov, and V. G. Nikitin, Fiz. Tekh. Poluprovodn. 7, 1159 (1973) [Sov. Phys. Semicond. 7, 780 (1973)].
Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, V. G. Nikitin, and A. A. Yakovenko, Fiz. Tekh. Poluprovodn. 4, 578 (1970) [Sov. Phys. Semicond. 4, 481 (1970)].
I. Hayashi, IEEE Trans. Electron Devices ED-31, 1630 (1984).
Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, Yu. V. Zhilyaev, E. P. Morozov, E. L. Portnoi, and V. G. Trofim, Fiz. Tekh. Poluprovodn. 4, 1826 (1970) [Sov. Phys. Semicond. 4, 1573 (1970)].
I. Hayashi, M. B. Panish, P. W. Foy, and S. Sumski, Appl. Phys. Lett. 17, 109 (1970).
Zh. I. Alferov, V. M. Andreev, S. G. Konnikov, V. G. Nikitin, and D. N. Tret’yakov, in Proceedings of the International Conference on the Physics and Chemistry of Semiconductor Heterojunctions and Layer Structures, Budapest, October, 1970, Vol. 1, edited by G. Szigeti (Académiai Kiadó, Budapest, 1971), p. 93.
G. A. Antipas, R. L. Moon, L. W. James, J. Edgecumbe, and R. L. Bell, Institute of Physics Conference Series, No. 17 (IOP Publ., Bristol, 1973), p. 48.
L. James, G. Antipas, R. Moon, J. Edgecumbe, and R. L. Bell, Appl. Phys. Lett. 22, 270 (1973).
A. P. Bogatov, L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, LB. N. Sverdlova, and E. G. Shevchenko, Kvantovaya Élektron. 1, 2294 (1974) [Sov. J. Quantum Electron. 4, 1281 (1974)]; J. J. Hsieh, Appl. Phys. Lett. 28, 283 (1976).
Zh. I. Alferov, I. N. Arsent’ev, D. Z. Garbuzov, S. G. Konnikov, and V. D. Rumyantsev, Pis’ma Zh. Tekh. Fiz. 1, 305 (1975) [Sov. Tech. Phys. Lett. 1, 147 (1975)]; Pis’ma Zh. Tekh. Fiz. 1, 406 (1975) [Sov. Tech. Phys. Lett. 1, 191 (1975)]; W. R. Hitchens, N. Holonyak, Jr., P. D. Wright, and J. J. Coleman, Appl. Phys. Lett. 27, 245 (1975).
Zh. I. Alferov, V. M. Andreev, R. F. Kazarinov, E. L. Portnoi, and R. A. Suris, Inventor’s Certificate No. 392875 [in Russian], Application No. 1677436, priority as of July 19, 1971.
H. Kogelnik and C. V. Shank, Appl. Phys. Lett. 18, 152 (1971).
R. F. Kazarinov and R. A. Suris, Fiz. Tekh. Poluprovodn. 6, 1359 (1972) [Sov. Phys. Semicond. 6, 1184 (1972)].
Zh. I. Alferov, S. A. Gurevich, R. F. Kazarinov, M. N. Mizerov, E. L. Portnoi, R. P. Seisyan, and R. A. Suris, Fiz. Tekh. Poluprovodn. 8, 832 (1974) [Sov. Phys. Semicond. 8, 541 (1974)]; Zh. I. Alferov, S. A. Gurevich, N. V. Klepikova, V. I. Kuchinskii, M. N. Mizerov, and E. L. Portnoi, Pis’ma Zh. Tekh. Fiz. 1, 645 (1975) [Sov. Tech. Phys. Lett. 1, 286 (1975)].
N. Nakamura, A. Yariv, H. W. Yen, S. Somekh, and H. L. Garvin, Appl. Phys. Lett. 22, 315 (1973).
D. R. Scifres, R. D. Burnham, and W. Streifer, Appl. Phys. Lett. 25, 203 (1974).
H. Kroemer and G. Griffiths, IEEE Trans. Electron Devices EDL-4, 20 (1983).
A. N. Baranov, B. E. Dzhurtanov, A. N. Imenkov, A. A. Rogachev, Yu. M. Shernyakov, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. 20, 2217 (1986) [Sov. Phys. Semicond. 20, 1385 (1986)].
A. Y. Cho, J. Vac. Sci. Technol. 8, 31 (1971); A. Y. Cho, Appl. Phys. Lett. 19, 467 (1971).
H. M. Manasevit, Appl. Phys. Lett. 12, 156 (1968).
R. D. Dupuis and P. D. Dapkus, Appl. Phys. Lett. 31, 466 (1977).
R. Dingle, W. Wiegmann, and C. H. Henry, Phys. Rev. Lett. 33, 827 (1974).
L. Esaki and R. Tsu, IBM J. Res. Dev. 14, 61 (1970).
L. V. Keldysh, Fiz. Tverd. Tela (Leningrad) 4, 2265 (1962) [Sov. Phys. Solid State 4, 1658 (1962)].
R. F. Kazarinov and R. A. Suris, Fiz. Tekh. Poluprovodn. 5, 707 (1971) [Sov. Phys. Semicond. 5, 619 (1971)]; Fiz. Tekh. Poluprovodn. 6, 120 (1972) [Sov. Phys. Semicond. 6, 96 (1972)]; Fiz. Tekh. Poluprovodn. 7, 346 (1973) [Sov. Phys. Semicond. 7, 246 (1973)].
R. Tsu and L. Esaki, Appl. Phys. Lett. 22, 562 (1973).
G. Osbourn, J. Appl. Phys. 53, 1586 (1982).
M. Ludowise, W. T. Dietze, C. R. Lewis, M. D. Camras, N. Holonyak, B. K. Fuller, and M. A. Nixon, Appl. Phys. Lett. 42, 487 (1983).
L. L. Chang, L. Easki, W. E. Howard, and R. Ludke, J. Vac. Sci. Technol. 10, 11 (1973).
L. L. Chang, L. Easki, and R. Tsu, Appl. Phys. Lett. 24, 593 (1974).
L. Esaki and L. L. Chang, Phys. Rev. Lett. 33, 686 (1974).
J. R. Schrieffer, in Semiconductor Surface Physics, edited by R. H. Kingston (Univ. Penn. Press, Philadelphia, 1956), p. 68.
A. B. Fowler, F. F. Fang, W. E. Howard, and P. J. Stilee, Phys. Rev. Lett. 16, 901 (1966).
V. N. Lutskii, Phys. Status Solidi A 1, 199 (1970).
R. Dingle, H. L. Stormer, H. L. Gossard, and W. Wiegmann, Appl. Phys. Lett. 33, 665 (1978).
D. Delagebeaudeuf et al., Electron. Lett. 16, 667 (1980).
T. Mimura, S. Hiyamizu, T. Fuji, and K. A. Nanbu, Jpn. J. Appl. Phys. 19, L225 (1980).
J. P. van der Ziel, R. Dingle, R. C. Miller, W. Wiegmann, and W. A. Nordland, Jr., Appl. Phys. Lett. 26, 463 (1975).
R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., E. A. Rezek, and R. Chin, Appl. Phys. Lett. 32, 295 (1978).
W. T. Tsang, Appl. Phys. Lett. 40, 217 (1982).
E. Rezek, H. Shichijo, B. A. Vojak, and N. Holonyak, Jr., Appl. Phys. Lett. 31, 534 (1977).
Zh. I. Alferov, D. Z. Garbuzov, I. N. Arsent’ev, B. Ya. Ber, L. S. Vavilova, V. V. Krasovskii, and A. V. Chudinov, Fiz. Tekh. Poluprovodn. 19, 1108 (1985) [Sov. Phys. Semicond. 19, 679 (1985)].
Zh. I. Alferov, V. M. Andreev, A. A. Vodnev, S. G. Konnikov, V. R. Larionov, K. Yu. Pogrebitskii, V. D. Rumyantsev, and V. P. Khvostikov, Pis’ma Zh. Tekh. Fiz. 12, 1089 (1986) [Sov. Tech. Phys. Lett. 12, 450 (1986)].
Zh. I. Alferov, D. Z. Garbuzov, K. Yu. Kizhaev, A. B. Nivin, S. A. Nikishin, A. V. Ovchinnikov, Z. P. Sokolova, I. S. Tarasov, and A. V. Chudinov, Pis’ma Zh. Tekh. Fiz. 12, 210 (1986) [Sov. Tech. Phys. Lett. 12, 87 (1986)]; Zh. I. Alferov, D. Z. Garbuzov, S. V. Zaitsev, A. B. Nivin, A. V. Ovchinnikov, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. 21, 824 (1987) [Sov. Phys. Semicond. 21, 503 (1987)].
Zh. I. Alferov, N. Yu. Antonishkis, I. N. Arsent’ev, D. Z. Garbuzov, V. I. Kolyshkin, T. N. Nalet, N. A. Strugov, and A. S. Tikunov, Fiz. Tekh. Poluprovodn. 22, 1031 (1988) [Sov. Phys. Semicond. 22, 650 (1988)]; D. Z. Garbuzov et al., in Technical Digest CLEO, Paper THU44 (1988), p. 396.
D. Z. Garbuzov et al., in Conference Digest of the 12th International Semiconductor Laser Conference (Davos, Switzerland, 1990), p. 238.
Zh. I. Alferov, A. I. Vasil’ev, S. V. Ivanov, P. S. Kop’ev, N. N. Ledentsov, M. É. Lutsenko, B. Ya. Mel’tser, and V. M. Ustinov, Pis’ma Zh. Tekh. Fiz. 14, 1803 (1988) [Sov. Tech. Phys. Lett. 14, 782 (1988)].
J. Faist et al., Science 264, 553 (1994); Electron. Lett. 30, 865 (1994).
K. V. Klitzing, G. Dorda, and M. Pepper, Phys. Rev. Lett. 45, 494 (1980).
D. C. Tsui, H. L. Stormer, and A. C. Gossard, Phys. Rev. Lett. 48, 1559 (1982).
P. M. Petroff, A. C. Gossard, R. A. Logan, and W. Wiegmann, Appl. Phys. Lett. 41, 635 (1982).
Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
S. Simhony, E. Kapon, T. Colas, D. M. Hwang, N. G. Stoffel, and P. Worland, Appl. Phys. Lett. 59, 2225 (1991).
A. I. Ekimov and A. A. Anushchenko, JETP Lett. 34, 347 (1981).
Al. L. Éfros and A. L. Éfros, Fiz. Tekh. Poluprovodn. 16, 1209 (1982) [Sov. Phys. Semicond. 16, 772 (1982)].
L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, G. Le Roux, Appl. Phys. Lett. 47, 1099 (1985).
A. F. Andreev, Zh. Éksp. Teor. Fiz. 80, 2042 (1981) [Sov. Phys. JETP 53, 1063 (1981)].
V. I. Marchenko, Zh. Éksp. Teor. Fiz. 81, 1141 (1981) [Sov. Phys. JETP 54, 605 (1981)].
R. Nötzel, N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, Phys. Rev. Lett. 67, 3812 (1991).
V. A. Shchukin, A. I. Borovkov, N. N. Ledentsov, and P. S. Kop’ev, Phys. Rev. B 51, 17767 (1995).
P. D. Wang, N. N. Ledentsov, C. M. Sotomayor Torres, P. S. Kop’ev, and V. M. Ustinov, Appl. Phys. Lett. 64, 1526 (1994).
V. Bressler Hill, A. Lorke, S. Varma, P. M. Petroff, K. Pond, and W. H. Weinberg, Phys. Rev. B 50, 8479 (1994).
N. N. Ledenstov et al., in Proceedings of the 22nd International Conference on the Physics of Semiconductors, Vancouver, Canada, 1994, World Scientific, Singapore, 1995.
Zh. I. Alferov, N. Yu. Gordeev, S. V. Zaitsev, P. S. Kop’ev, I. V. Kochnev, V. V. Khomin, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, S. S. Ruvimov, A. V. Sakharov, A. F. Tsatsul’nikov, Yu. M. Shernyakov, and D. Bimberg, Fiz. Tekh. Poluprovodn. 30, 357 (1996) [Semiconductors 30, 197 (1996)].
V. A. Shchukin, N. N. Ledentsov, P. S. Kop’ev, and D. Bimberg, Phys. Rev. Lett. 75, 2968 (1995); V. A. Shchukin, N. N. Ledentsov, M. Grundmann, P. S. Kop’ev, and D. Bimberg, Surf. Sci. 352–354, 117 (1996).
Zh. I. Alferov, N. A. Bert, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, A. O. Kosogov, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, A. V. Sakharov, V. M. Ustinov, A. F. Tsatsul’nikov, Yu. M. Shernyakov, and D. Bimberg, Fiz. Tekh. Poluprovodn. 30, 351 (1996) [Semiconductors 30, 194 (1996)].
M. Grundmann et al., Phys. Rev. Lett. 74, 4043 (1995).
N. Kirstaedter et al., Electron. Lett. 30, 1416 (1994).
M. V. Maksimov et al., Fiz. Tekh. Poluprovodn. 31, 670 (1997) [Semiconductors 31, 571 (1997)].
M. Grundmann et al., in Proceedings of the Eighth International Conference on Indium Phosphide and Related Materials (Schwäbisch Gmünd, Germany, 1996).
V. M. Ustinov et al., in Ninth International Conference on MBE (Malibu, USA, August, 1996) (Proceedings to be published in J. Crystal Growth).
F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, and D. Bimberg et al., Appl. Phys. Lett. 67, 656 (1995).
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Fiz. Tekh. Poluprovodn. 32, 1–18 (January 1998)
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Alferov, Z.I. The history and future of semiconductor heterostructures. Semiconductors 32, 1–14 (1998). https://doi.org/10.1134/1.1187350
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DOI: https://doi.org/10.1134/1.1187350