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Field diffusion in disordered organic materials under conditions of occupied deep states

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Abstract

A simple analytical model of the field-diffusion coefficient is developed for moderate carrier concentrations. Hopping transport is described by the multiple-trapping model based on the transport-level concept. A continuity equation with a diffusion coefficient depending on carrier concentration is obtained, the time dependence of the field-diffusion coefficient under non-steady-state conditions is found. The time intervals in which deep state population affects the mobility and diffusion coefficient under conditions of time-of-flight experiments are estimated. It is shown that the field-diffusion coefficient increases in a long time interval while the mobility is unchanged, which is reminiscent of a similar case of nonequilibrium initial carrier generation at the low-concentration limit.

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Correspondence to V. R. Nikitenko.

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Original Russian Text © V.R. Nikitenko, A.Yu. Kudrov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 2, pp. 166–171.

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Nikitenko, V.R., Kudrov, A.Y. Field diffusion in disordered organic materials under conditions of occupied deep states. Semiconductors 51, 158–162 (2017). https://doi.org/10.1134/S1063782617020129

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  • DOI: https://doi.org/10.1134/S1063782617020129

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