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Effect of interparticle interactions on radiative lifetime of photoexcited electron-hole system in GaAs quantum wells

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Abstract

The paper reports on an investigation of changes in the photoluminescence linewidth and lifetime of excitons and electron-hole plasma over a wide range of densities between 3×107 and 3×1012 cm−2 at a temperature of 77 K in GaAs/AlGaAs quantum wells. The roles played by thermal ionization of excitons at low densities of nonequilibrium carriers, exciton-exciton and exciton-electron collisions, and ionization of excitons at high pumping power densities have been studied.

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Zh. Éksp. Teor. Fiz. 112, 353–361 (July 1997)

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Kulik, L.V., Tartakovskii, A.I., Larionov, A.V. et al. Effect of interparticle interactions on radiative lifetime of photoexcited electron-hole system in GaAs quantum wells. J. Exp. Theor. Phys. 85, 195–199 (1997). https://doi.org/10.1134/1.558306

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  • DOI: https://doi.org/10.1134/1.558306

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