Wafer-to-wafer hybrid bonding is an attractive 3D integration technology for stacking multiple heterogeneous chips with high 3D interconnect density. We highlight recent design and technology innovations that enable hybrid Cu, SiCN-to-Cu and SiCN bonding with interconnect pitches down to an unprecedented 400 nm.
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The authors thank the 3D system integration department at imec for their contributions and M. Van Bavel for editing this article.
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Chew, S.A., De Vos, J. & Beyne, E. Wafer-to-wafer hybrid bonding at 400-nm interconnect pitch. Nat Rev Electr Eng 1, 71–72 (2024). https://doi.org/10.1038/s44287-024-00019-8
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DOI: https://doi.org/10.1038/s44287-024-00019-8
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