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Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes

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The Original Article was published on 22 November 2023

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Fig. 1: Transport data of three-layer rippled-MoS2 devices.

Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Authors and Affiliations

Authors

Contributions

J.W. and M.Y. conceived the idea and designed the project. H.K.N. and D.X. prepared the substrates and fabricated devices. H.K.N. performed electrical transport characterization. Data analysis and interpretations were carried out by J.W., M.Y., H.K.N., K.Y., A.S., G.H., C.-W.Q. and all other co-authors. H.K.N., J.W. and M.Y. initiated the draft, with inputs and comments from all authors.

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Correspondence to Ming Yang or Jing Wu.

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The authors declare no competing interests.

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Ng, H.K., Xiang, D., Suwardi, A. et al. Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes. Nat Electron 6, 839–841 (2023). https://doi.org/10.1038/s41928-023-01044-5

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